Manufacturing method for photoelectric sensor with receiving active region on a inclined surface
A technology of photodetector and manufacturing method, applied in the field of photodetector, can solve the problem of high cost, achieve the effect of reducing cost, simple and efficient planar optical interconnection, and improving the quality of epitaxial growth
Inactive Publication Date: 2010-06-23
上海国增知识产权服务有限公司
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The method of electroplating deposition covering photoresist has the best uniformity, but it needs special electroplating photoresist solution and electroplating deposition equipment, and the method of spray coating photoresist also depends on equipment, so the cost is higher
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[0054] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0055] Such as figure 2 as shown, figure 2 A flow chart of a method for manufacturing a photodetector whose receiving active area is located on a slope provided by the present invention, the method includes the following steps:
[0056] Step 201: Wet etching a deep groove slope on the semiconductor substrate to form a high-step pattern substrate;
[0057] Step 202: performing epitaxial growth of the detector material structure on the formed high-step pattern substrate;
[0058] Step 203: Perform microelectronics manufacturing on the epitaxially grown high-step pattern substrate to form a photodetector whose receiving active area is located on the slope.
[0059] The method for manufacturing a photodetector with a rec...
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The invention discloses a manufacturing method for a photoelectric detector with an active receiving area positioned on an inclined surface, which belongs to the technical field of the photoelectric detector. The method comprises the following steps: the inclined surface of a deep kerf is etched on a semiconductor substrate by a wet method, and a high-step pattern substrate is formed; the epitaxial growth of the detector material structure is performed on the high-step pattern substrate; the micro-electronic process manufacture is carried out on the high-step pattern substrate on which the epitaxial growth is finished, and the photoelectric detector with the active receiving area positioned on the inclined surface is formed. By using the invention, the performance of the photoelectric detector can be enhanced, the cost is reduced, and the purpose of simple and convenient planar light interconnection with low cost and high efficiency is achieved.
Description
technical field [0001] The present invention relates to the technical field of photodetectors, in particular to a method for manufacturing a photodetector whose receiving active area is located on a slope, utilizing the etching technology of a flat slope on a semiconductor substrate, the epitaxial material growth technology on a deep groove slope, Epitaxial layer structure design for high-performance photodetectors and microelectronic chip manufacturing process technology on deep groove slopes. Background technique [0002] Optical interconnection has many advantages such as large capacity, high speed, low power consumption, low cost, and strong anti-interference, and can overcome the shortcomings of low density, high loss, and long delay of electrical interconnection in large-capacity data communication. In the short-distance high-speed data communication between cabinets, between printed boards and between printed boards, and between chips, high-speed, high-density paralle...
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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor申华军李志华杨成樾万里兮李宝霞
Owner上海国增知识产权服务有限公司