Group III nitride composite substrate with asymmetric periodic structure and processing method thereof
A periodic structure, composite substrate technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of poor crystal quality, difficulty in epitaxial growth polarity, inability to adjust non-polar and semi-polar group III nitrides. problems such as anisotropy, to achieve the effect of reducing stress anisotropy and eliminating stress anisotropy
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Embodiment 1
[0042] A group III nitride compound substrate with an asymmetric periodic structure in this embodiment, such as figure 1 As shown, a sapphire substrate 101 with a specific orientation is included, and a direction 1 and a direction 2 are defined on the surface of the sapphire substrate 101; a pattern 102 is arranged on the upper surface of the sapphire substrate, wherein the pattern 102 is arranged in a period T along the direction 1 1 , along the direction 2 according to the period T 2 Regularly arranged at intervals, direction 1 and direction 2 are perpendicular to each other and parallel to the orientation of the sapphire substrate, and the period T 1 Not equal to period T 2 , and the patterns arranged along direction 1 and direction 2 are consistent; a dielectric layer 103 is also arranged on the non-pattern area on the upper surface of the sapphire substrate. In this example, the sapphire substrate is provided with 3 groups of graphics along direction 2, and multiple gr...
Embodiment 2
[0047] A group III nitride compound substrate with an asymmetric periodic structure in this embodiment, such as figure 1 As shown, a sapphire substrate 101 with a specific orientation is included, and a direction 1 and a direction 2 are defined on the surface of the sapphire substrate 101; a pattern 102 is arranged on the upper surface of the sapphire substrate, wherein the pattern 102 is arranged in a period T along the direction 1 1 , along the direction 2 according to the period T 2 Regularly arranged at intervals, direction 1 and direction 2 are perpendicular to each other and parallel to the orientation of the sapphire substrate, and the period T 1 Not equal to period T 2 , and the patterns arranged along direction 1 and direction 2 are consistent; a dielectric layer 103 is also arranged on the non-pattern area on the upper surface of the sapphire substrate.
[0048] Wherein, the orientation of the sapphire substrate 101 is the (1-102) crystal plane, the direction 1 is...
Embodiment 3
[0052] This example is the processing method of the composite substrate in Example 1, including the following specific steps:
[0053] 1) Perform a photolithography process on the upper surface of the sapphire substrate 101, respectively along the direction 1 by period T 1 and along direction 2 by period T 2 Patterns are etched at intervals; among them, T 1 =690nm, T 2 =1269nm
[0054] 2) Coating silicon oxide or silicon nitride on the surface of the sapphire substrate 101 after the photolithography process is completed, the coating thickness is 50% to 100% of the pattern height;
[0055] 3) Perform a photolithography process on the surface of the sapphire substrate 101 that has been coated with silicon oxide or silicon nitride, etch away the part of the silicon oxide or silicon nitride coating that is higher than the lowest part of the upper surface, and leave the remaining silicon oxide or silicon nitride coating As the dielectric layer 103, the processing of the composi...
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Abstract
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