This invention belongs to the field of
solar cell technology and relates to a method for preparing
antimony sulfide selenide thin films based on liquid-gas synergistic post-treatment and its application in solar cells. The method utilizes gaseous substances generated by the melting and in-situ
pyrolysis of a modifier to act on the
antimony sulfide selenide thin film. Specifically, it includes the following steps: spin-
coating a modifier post-treatment liquid onto the surface of the
antimony sulfide selenide thin film, followed by heat treatment. During heating, as the temperature rises, the components of the treatment liquid first melt into a
liquid state, promoting
atomic mass transfer within the film and inducing
grain growth; as the temperature further increases, the treatment liquid undergoes
pyrolysis, generating gaseous substances until complete
evaporation. These gaseous
decomposition products can regulate the local
vapor pressure of
selenium and
sulfur, inhibiting the escape of
selenium and
sulfur elements, exerting post-
sulfidation and post-selenization effects, thereby optimizing the
crystallization kinetics of the thin film. This method can reform
grain growth, make the surface smoother and flatter, regulate the thin film composition to approach
stoichiometry, passivate deep defects, improve the back interface quality of the device, alleviate the gradient distribution of the
valence band position in the thin film, optimize band matching, and enhance carrier transport dynamics. This liquid-gas synergistic effect significantly improves the overall quality of the film, ultimately enhancing its photoelectric properties. This invention is the first to employ a liquid-gas synergistic approach to treat the surface of antimony sulfoselenide films, providing a new avenue for subsequent optimization of these films.