Visible/infrared wide optical spectrum color separation filter based on germanium substrate

A technology of color separation film and wide spectrum, applied in the field of wide spectrum color separation film, to achieve the effect of reasonable and feasible technical solution, wide transmission spectrum range and stable product performance

Inactive Publication Date: 2010-06-09
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Claims
  • Application Information

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Problems solved by technology

There are also applications abroad for color separation films with this structure, but the infrared bands are concentrated in the medium and long wave regions, while the short-wave infrared band (2.0-3.0 μm) where most materials have water vapor absorption is rarely involved, let alone products available on

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  • Visible/infrared wide optical spectrum color separation filter based on germanium substrate
  • Visible/infrared wide optical spectrum color separation filter based on germanium substrate
  • Visible/infrared wide optical spectrum color separation filter based on germanium substrate

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Embodiment Construction

[0027] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] The concrete technical index requirement of the embodiment of the present invention is:

[0029]

[0030] The base material is Ge, used at 45°.

[0031] According to technical requirements, using the infrared material Ge as the substrate, in order to realize reflection in the visible band and transmission in the infrared band, in the design of the film system, the refractive index matching between the substrate and the film layer must first be considered, so an asymmetric equivalent layer 2 is added before the reflective stack. In order to realize the refractive index matching between the substrate 1 and the reflective stack 4 . Considering that the oxide has a relatively serious water vapor absorption peak in the transmission region of 2.7-3.0um, ZnS and YF3 with smaller absorption are selected as the high an...

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Abstract

The invention discloses a visible / short and middle wave infrared spectrum color separation filter which takes germanium as a base. A reflection reactor takes ZnS and YF3 as materials with high-low index of refraction; an equivalent layer is plated by using SiO and Ge by the following specific techniques, of the assistance of ion sources and the choice of appropriate base temperature, etc. The color separation filter is measured at 45 degrees of the incident angle: the wave bands of a transmission area are 2.5-2.95mum and 4.2-4.8mum, and T is more than 90 percent; the wave band of a reflectingarea is 0.55-0.75mnm, R is more than 70 percent. The color separation filter has stable performance and is suitable for color separation of a modern multispectral space remote sensing instrument.

Description

technical field [0001] The invention relates to optical thin film technology, in particular to a germanium-based wide-spectrum dichroic film that reflects visible light and transmits short and mid-wave infrared. technical background [0002] As an important spectroscopic device in the optical system, the color separation plate is widely used in multi-spectrum and wide-spectrum aerospace remote sensing imaging instruments and communication systems. Visible / short-wave infrared and mid-wave infrared dichroic film is to spectrally separate visible light, short-wave infrared, and mid-wave infrared light. Most of the currently available products adopt the method of transmissive, visible and anti-infrared. The substrate is mostly JGS-1 quartz glass, and the film system design is based on the principle of induced transmission, using a basic three-layer thin film structure in the form of dielectric / metal / dielectric. However, for some imaging optical systems, the color separation fil...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/20G02B1/10B32B7/02C23C14/48G02B1/115
Inventor 于天燕成效春秦杨刘定权张凤山
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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