High-pressure thyristor and production technique thereof

A high-voltage thyristor and production process technology, which is applied in the manufacture of thyristors, electrical components, semiconductor/solid-state devices, etc., can solve the problem of not being able to meet high-concentration deep junction depth and shallow junction depth at the same time, and achieve obvious effects, considerable economic and social benefits. Effect

Inactive Publication Date: 2009-11-18
杨景仁
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thyristors manufactured by the prior art production process form exactly the same P 1 District and P 2 area, the deficiency is: cannot satisfy P at the same time 1 High concentration deep junction depth and P 2 Area's shallow end deep requirements

Method used

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  • High-pressure thyristor and production technique thereof

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Embodiment 1

[0009] The production process of the high-voltage thyristor in this embodiment: ① On the N-type silicon wafer, the P-type impurity gallium-aluminum is diffused at one time to form the same P-type impurity with shallow junction depth and low concentration 1 District and P 2 District, P 1 District and P 2 The area surface concentration is 10 (1 mA test current), and the junction depth is 100 μm. ②In P 1 The surface of the region is coated with a P-type impurity boron source and then diffused to form a P-type impurity with a shallow junction depth and a lower concentration. 2 Zones and junctions are deep, with high concentrations of P 1 Area. P 2 Surface concentration 6mv (1mA test current), junction depth 110μm; P 1 The surface concentration is 0.1mv (1mA test current), and the junction depth is 120μm. ③ in P 2 Diffusion of N-type impurity phosphorus to form N 2 Floor. N 2 The surface concentration is 0.11mv (1mA test current), and the junction depth is 22μm. ④ in P...

Embodiment 2

[0011] The production process of this embodiment: ① On the N-type silicon wafer, the P-type impurity aluminum is vacuum-diffused twice to form the same P-type impurity with shallow junction depth and low concentration. 1 District and P 2 Area. The surface concentration is 12mv (1mA test current), and the junction depth is 90μm. ②In P 1 The surface of the region is coated with a P-type impurity boron source and then diffused to form a P-type impurity with a shallow junction depth and a lower concentration. 2 Zones and junctions are deep, with high concentrations of P 1 Area. P 2 Surface concentration 10mv (1mA test current), junction depth 120μm; P 1 The surface concentration is 3mv (1mA test current), and the junction depth is 135μm. ③Oxidation and photolithography to obtain the required SiO 2 mask layer. ④ in P 2 Diffusion of N-type impurities in the region to form N 2 Floor. N 2 The surface concentration is 0.08mv (1mA test current), and the junction depth is 20...

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Abstract

The invention relates to a high-pressure thyristor and a production technique thereof. The production technique comprising the steps as follows: forming the same P1 region and P2 region with low junction depth and low concentration, wherein the surface concentration is 10-15mv and the junction depth is 90-100 microns; coating and diffusing a P-type impurity source on the surface of the P1 region to form a P2 region with low junction depth and low concentration and a P1 region with large junction depth and high concentration, wherein the P2 region has a surface concentration of 8-10mv and a junction depth of 110-130 microns, and the P1 region has a surface concentration of 0.1-3mv and a junction depth of 120-145 microns; diffusing N-type impurity on the P2 region to form an N2 layer which has a surface concentration of 0.08-0.11mv and a junction depth of 15-22 microns; and manufacturing an ohm contact layer on the surface of P1 and N2 to form an electrode. The invention achieves the effect of coordinating the forward and reverse blocking voltage symmetry and reducing the on-state voltage by manufacturing asymmetrical P1 region and P2 region, and the on-state voltage of elements reduces by 10-15 percent, thereby having obvious effects.

Description

Technical field [0001] The present invention relates to a semiconductor device and a method for manufacturing or processing the same, in particular to a high-voltage thyristor and a production process thereof. Background technique [0002] A thyristor is a PNPN four-layer three-terminal device with three PN junctions (as shown in Figure 1). A is the anode of the thyristor, K is the cathode of the thyristor, and G is the gate of the thyristor. The production process of the thyristor in the prior art is as follows: 1. On the N-type silicon wafer, the P-type impurities are diffused once or twice to form an identical P-type impurity. 1 District and P 2 Area. ② Obtain the required SiO by oxidation and photolithography 2 mask layer. ③ in P 2 Diffusion of N-type impurities in the region to form N 2 Floor. ④ in P 1 and N 2 An ohmic contact layer is fabricated on the surface to form electrodes. The thyristor manufactured by the prior art production process forms exactly th...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L21/332H01L29/74
Inventor杨景仁
Owner杨景仁