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Semiconductor device including driving transistors

A technology for driving transistors and semiconductors, used in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., and can solve all problems such as optimization of characteristics

Active Publication Date: 2010-01-13
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, it may be difficult to optimize all characteristics of individual components having various functions in a semiconductor device, such as various driving circuits and / or memory cells in the device

Method used

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  • Semiconductor device including driving transistors
  • Semiconductor device including driving transistors
  • Semiconductor device including driving transistors

Examples

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Embodiment Construction

[0053] Preferred embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this description will be thorough and complete, and will fully convey the invention to those skilled in the art. In the drawings, the dimensions of layers and regions are exaggerated for clarity of illustration. It will also be understood that when a layer (or film) is referred to as being 'on' another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Further, it will be understood that when a layer is referred to as being 'under' another layer, it can be directly under, and one or more intervening layers may also be present. In addition, it will also be understood that when a layer is referred t...

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PUM

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Abstract

A semiconductor device includes a driving active region defined in a substrate and at least three driving transistors disposed at the driving active region. The driving transistors share one common source / drain, and each of the driving transistors includes individual source / drains being independent from each other. The common source / drain and the individual source / drains are disposed in the driving active region.

Description

[0001] Cross References to Related Applications [0001] This US nonprovisional patent application claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2008-0067702 filed with the Korean Intellectual Property Office on July 11, 2008, the entire contents of which are hereby incorporated by reference. technical field [0002] The invention described herein relates to a semiconductor device, and more particularly, to a semiconductor device including a driving transistor. Background technique [0003] A semiconductor device includes a memory device for storing data, a logic device for processing data and performing calculations, and a hybrid device for simultaneously performing various functions. Types of memory devices include volatile memory devices that lose their stored data if power is interrupted and non-volatile memory devices that retain their stored data if power is removed. [0004] Demands for highly integrated semiconductor devices have been gre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/105H01L29/78H01L29/417H10B69/00
CPCH01L27/11526H01L27/11531H01L29/78H01L21/823425H01L27/11573H01L27/0207H01L27/11519H01L27/105H01L27/11568H10B41/42H10B41/10H10B41/40H10B43/30H10B43/40
Inventor 李世薰李忠浩崔晶东金泰瑢金宇中张桐熏尹永培金基玄刘民胎
Owner SAMSUNG ELECTRONICS CO LTD