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Method and device for judging repeated defects on surface of wafer

A wafer and defect technology, applied in the field of judging repetitive defects on the wafer surface, can solve problems such as the inability to judge repetitive defects on the wafer surface

Inactive Publication Date: 2010-06-16
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Since the existing technology uses the method of comparing the grains to judge the defects, and the repeated defect happens to be a kind of defect that exists at the same position between each grain, so the existing technology cannot judge the wafer surface Whether there is a repeat defect

Method used

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  • Method and device for judging repeated defects on surface of wafer
  • Method and device for judging repeated defects on surface of wafer
  • Method and device for judging repeated defects on surface of wafer

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Embodiment Construction

[0028] The specific implementation of the method and device for judging repetitive defects on the wafer surface provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] Firstly, a specific embodiment of the method for judging repetitive defects on the wafer surface according to the present invention will be given in conjunction with the accompanying drawings.

[0030] The wafer described in this specific embodiment is a multi-project wafer (MPW: Multi-Project Wafer). A multi-purpose wafer is a special type of wafer. The wafer is to put multiple integrated circuit designs using the same process on the same wafer. After the manufacturing is completed, dozens of chip samples can be obtained for each design. This number is enough for the experiment and test in the prototype design stage. enough. The manufacturing cost is shared by all projects participating in MPW according to the chip area, and the cost is only ...

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Abstract

The invention relates to a method for judging repeated defects on the surface of a wafer. The method comprises the following steps of: (a) obtaining surface topography data of a plurality of grains on the surface of a wafer to be tested and design data of the grain topography data; (b) determining a dividing rule of sub-grains according to the design data of the grain topography of the wafer to be tested; (c) dividing each grain into a plurality of sub-grains by utilizing the surface topography data of the grains according to the sub-grain dividing rule; (d) forming at least one detection sequence by using each sub-grain as a basic detection unit; and (e) in the same detection sequence, selecting and comparing each sub-grain with at least two other sub-grains to judge the repeated defects. The invention also provides a device for judging the repeated defects on the surface of the wafer. The invention has the advantage that repeatedly appearing sub-grains in each grain are used as a basic testing unit to test the surface of the wafer, thus the invention can test an area of repeated units on the surface of the wafer so as to find out the repeated defects in the area on the surface of the grain.

Description

【Technical field】 [0001] The invention relates to the field of integrated circuit manufacturing and testing, in particular to a method and a device for judging repetitive defects on the wafer surface. 【Background technique】 [0002] In the field of integrated circuit manufacturing, it is necessary to use photolithography to form patterns on the surface of the wafer to obtain the structure required by the design. During the photolithography process, due to the influence of the photolithography plate, photoresist and other factors, there may be defects in the pattern formed by the photolithography on the surface of the wafer. Therefore, it is necessary to adopt a method to judge whether there is a defect in the pattern on the surface of the wafer. [0003] In the process of judging whether the wafer surface has repetitive defects, the surface topography of each crystal grain in the wafer must first be obtained. To obtain the surface topography, methods such as scanning elect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/956H01L21/66
Inventor 吴浩
Owner SEMICON MFG INT (SHANGHAI) CORP