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Method and device for judging repetitive defects on wafer surface

A wafer and defect technology, applied in the field of judging repetitive defects on the wafer surface, can solve problems such as the inability to judge repetitive defects on the wafer surface

Inactive Publication Date: 2011-12-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Since the existing technology uses the method of comparing the grains to judge the defects, and the repeated defect happens to be a kind of defect that exists at the same position between each grain, so the existing technology cannot judge the wafer surface Whether there is a repeat defect

Method used

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  • Method and device for judging repetitive defects on wafer surface
  • Method and device for judging repetitive defects on wafer surface
  • Method and device for judging repetitive defects on wafer surface

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Embodiment Construction

[0028] The specific implementation of the method and device for judging repetitive defects on the wafer surface provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] Firstly, a specific embodiment of the method for judging repetitive defects on the wafer surface according to the present invention will be given in conjunction with the accompanying drawings.

[0030] The wafer described in this specific embodiment is a multi-project wafer (MPW: Multi-Project Wafer). A multi-purpose wafer is a special type of wafer. The wafer is to put multiple integrated circuit designs using the same process on the same wafer. After the manufacturing is completed, dozens of chip samples can be obtained for each design. This number is enough for the experiment and test in the prototype design stage. enough. The manufacturing cost is shared by all projects participating in MPW according to the chip area, and the cost is only ...

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Abstract

A method for judging repetitive defects on the surface of a wafer, comprising the steps of: (a) obtaining surface topography data of several crystal grains on the surface of the wafer to be tested, and design data of the grain topography; (b) according to the wafer to be tested According to the design data of the grain morphology, determine the sub-grain division rules; (c) according to the sub-grain division rules, use the surface morphology data of the grains to divide each grain into several sub-grains; (d) At least one detection sequence is composed of sub-crystals as the basic detection unit; (e) in the same detection sequence, each sub-crystal is selected for comparison with at least two other sub-crystals to determine repeated defects. The invention also provides a device for judging repetitive defects on the wafer surface. The advantage of the present invention is that the surface of the wafer is tested with the repeated sub-grains in each crystal grain as the basic test unit. Therefore, the present invention can test the area where the repeat unit is located on the surface of the crystal grain, so as to find the repeat defect on the surface of the crystal grain located in the above-mentioned area.

Description

【Technical field】 [0001] The invention relates to the field of integrated circuit manufacturing and testing, in particular to a method and a device for judging repetitive defects on the wafer surface. 【Background technique】 [0002] In the field of integrated circuit manufacturing, it is necessary to use photolithography to form patterns on the surface of the wafer to obtain the structure required by the design. During the photolithography process, due to the influence of the photolithography plate, photoresist and other factors, there may be defects in the pattern formed by the photolithography on the surface of the wafer. Therefore, it is necessary to adopt a method to judge whether there is a defect in the pattern on the surface of the wafer. [0003] In the process of judging whether the wafer surface has repetitive defects, the surface topography of each crystal grain in the wafer must first be obtained. To obtain the surface topography, methods such as scanning elect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/956H01L21/66
Inventor 吴浩
Owner SEMICON MFG INT (SHANGHAI) CORP