Thermal field structure of moving thermal insulation ring for vertically oriented growth of polysilicon

Abstract

The invention relates to the technical field of design and manufacture of a polysilicon ingot furnace, and aims to provide a thermal field structure of a moving thermal insulation ring for vertically oriented growth of polysilicon. The heat field structure includes a furnace chamber with a side-enclosed heat-insulation cage, the crucible and the heat field are placed in the heat-insulation cage, and the upper end of the heat-insulation cage is connected with the lifting device; the upper and lower sides of the heat-insulation cage The top insulation board and the lower insulation layer are respectively arranged, wherein the top insulation board is fixedly suspended on the electrode, the lower insulation layer and the heat exchange platform are fixed on the support column, the top insulation board is connected with the upper end of the heat insulation cage, and the lower The insulation layer is movably connected with the lower end of the heat insulation cage; an annular follower heat insulation ring is fixed inside the heat insulation cage through several connecting devices. The invention has a reasonable design, can increase polysilicon crystal grains, reduce grain boundaries, improve the verticality of crystal growth direction, thereby improving the quality of polysilicon ingots, and at the same time, the follower heat insulation ring also plays a role in reducing energy consumption.

Description

technical field [0001] The invention relates to the technical field of design and manufacture of a polysilicon ingot furnace, in particular to a thermal field structure of a follower insulation ring for vertically oriented growth of polysilicon. Background technique [0002] There are a large number of grain boundaries in cast polysilicon, and the clean grain boundaries are non-electrically active, which has no or only a slight impact on the minority carrier lifetime, while the segregation or precipitation of impurities will change the electrical activity of the grain boundaries, which will significantly reduce Minority carrier life, the more grain boundaries, the greater the impact; but studies have shown that if the grain boundaries are perpendicular to the device surface, the grain boundaries have little effect on the electrochemical performance of the material, so increasing the grain size and improving the growth direction are important An effective method to improve th...

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Problems solved by technology

However, due to structural design defects in the supporting thermal field of the existing polycrystalline ingot furnace, it is difficult to meet the above requirements

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