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N-type zinc oxide/p-type diamond heterojunction tunnel diode and manufacturing method thereof

A technology of tunnel diode and diamond, applied in diode, semiconductor/solid-state device manufacturing, electrical components and other directions, to achieve the effect of high crystal quality, cheap manufacturing and strong controllability

Inactive Publication Date: 2011-05-25
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] An n-type ZnO / p-type diamond heterojunction tunnel diode and its manufacturing method proposed by the patent of the present invention have not yet seen similar patents and literature reports

Method used

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  • N-type zinc oxide/p-type diamond heterojunction tunnel diode and manufacturing method thereof
  • N-type zinc oxide/p-type diamond heterojunction tunnel diode and manufacturing method thereof
  • N-type zinc oxide/p-type diamond heterojunction tunnel diode and manufacturing method thereof

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Embodiment 1

[0020] Embodiment 1: Illustrate the structure of the tunnel diode of the present invention in conjunction with the accompanying drawings

[0021] The structure of n-type ZnO / p-type diamond heterojunction tunnel diode is as follows Figure 4 shown. Figure 4 Among them, 1 is p-type diamond, which is a boron-doped CVD diamond film or a boron-doped CVD diamond single crystal, and 2 is n-type ZnO, which can be an array material of zinc oxide nanorods, zinc oxide nanowires, and zinc oxide nanotubes. Grown on p-type diamond, 3 is conductive glass (ITO), and 4 is electrode silver paste. The conductive surface of the conductive glass 3 is pressed down on the n-type ZnO nanorod array as a conductive cathode, and the p-type diamond film is used as an anode. Use electrode silver paste 4 to connect copper wires to make ohmic electrodes.

[0022] Connect it with a Keithley 2400 digital source meter with a wire to test the I-V characteristic curve of the device. Figure 5 The I-V charac...

Embodiment 2

[0023] Embodiment 2: p-type CVD polycrystalline diamond film growth n-type ZnO nanorods and fabrication of tunnel diode devices.

[0024] Boron-doped p-type diamond films were prepared by microwave plasma CVD. Growth condition parameters of p-type CVD polycrystalline diamond film: p-type Si is used as substrate, microwave power is 300-1000W, pressure is 7-8kPa, hydrogen gas flow rate is 200-300sccm, methane gas flow rate is 4-6sccm, and boron source is boron Alkanes or trimethyl borate, borane or trimethyl borate are carried by hydrogen gas into the reaction chamber, the flow rate is 10-20 sccm, the substrate temperature is kept at 700-1000°C, and the film growth time is 3-24 hours.

[0025] The equipment and method for growing boron-doped p-type CVD polycrystalline diamond film can also use hot filament CVD method, DC hot cathode CVD method or DC jet CVD method in addition to microwave plasma CVD method.

[0026] ZnO nanorods were prepared using a thermal evaporation method....

Embodiment 3

[0028] Example 3: Fabrication of p-type CVD diamond single crystal growth n-type ZnO nanorods and tunnel diode devices.

[0029] Boron-doped p-type CVD diamond single crystals were prepared by microwave plasma CVD. Boron-doped p-type CVD diamond single crystal growth uses borane or trimethyl borate as boron source, and natural diamond single crystal, high temperature and high pressure synthetic diamond single crystal or CVD diamond single crystal as substrate.

[0030] The boron-doped p-type CVD diamond polycrystalline film in Example 2 was replaced with a boron-doped p-type CVD diamond single crystal, and other specific steps were the same as in Example 2, and ZnO nanostructures were grown on the p-type CVD diamond single crystal.

[0031] Electrode is made with embodiment 2.

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Abstract

The invention discloses an n-type zinc oxide / p-type diamond heterojunction tunnel diode and a manufacturing method thereof, belonging to the technical field of semiconductor materials and the preparation thereof. The tunnel diode has a structure that: zinc oxide nano array structure is vertically grown on a p-type diamond (1) to form n-type zinc oxide (2); conductive glass (3) is in contact with the zinc oxide nanometer structure as a conductive cathode, and the p-type diamond (1) is taken as a conductive anode. The manufacturing method comprises the steps of growing the p-type diamond on a silicon / diamond single crystal substrate, growing the nanometer structure of the n-type zinc oxide (2) on the p-type diamond by using a thermal evaporation method, and finally manufacturing electrodes.In the invention, the tunnel diode with negative resistance characteristic does not need the past multilayer complex structure and has larger current peak-to-valley ratio; and the manufacturing method of the tunnel diode has the advantages of simpleness, strong controllability, high crystal quality, low manufacturing cost and the like.

Description

technical field [0001] The invention relates to a method for growing an n-type zinc oxide (ZnO) nanostructure on p-type diamond to form a heterojunction structure by thermal evaporation, and making a tunnel diode device with negative resistance characteristics, which belongs to the technology of semiconductor materials and their preparation field. Background technique [0002] Among the p-n junction semiconductor devices, there is a kind of device, in a certain voltage range, the phenomenon that the current decreases with the increase of the voltage, that is, the negative resistance characteristic, this kind of device is called p-n junction tunnel diode. Tunnel diodes have many uses, such as microwave amplification, high-speed switching, laser vibration sources, etc., have been widely used as local oscillators and power amplifiers, and become important solid-state microwave sources used in detection systems, remote control and microwave testing instruments . Tunnel diodes ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/88H01L21/34H01L29/267
Inventor 李红东桑丹丹吕宪义
Owner JILIN UNIV