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NOR type flash memory structure with highly doped drain region and manufacturing method thereof

A manufacturing method and technology of the drain region, applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of the drain being dug through and destroying the structure, etc.

Active Publication Date: 2012-05-23
EON SILICON SOLUTION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the lightly doped drain reduces the high electric field of the drain junction and effectively improves the reliability of the component, the shallow junction depth caused by the lightly doped drain is easy to cause the drain to be dug through when the contact hole is etched. The phenomenon of destroying the memory structure

Method used

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  • NOR type flash memory structure with highly doped drain region and manufacturing method thereof
  • NOR type flash memory structure with highly doped drain region and manufacturing method thereof
  • NOR type flash memory structure with highly doped drain region and manufacturing method thereof

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Embodiment Construction

[0044] In order to fully understand the purpose, features and effects of the present invention, the present invention will be described in detail through the following specific embodiments and accompanying drawings, which will be described later. In these drawings and embodiments, the same components will use the same symbols.

[0045] First refer to figure 1 , is a partial cross-sectional view of the flash memory structure of the present invention. The figure shows that two gate structures 102 are formed on a semiconductor substrate 100, and these gate structures 102 respectively include: a tunneling oxide layer 102a (tunneling oxide layer), a floating gate 102b (floating gate), and a dielectric layer 102c , a control gate 102d (control gate), and a channel 103 is formed. The material of the semiconductor substrate 100 can be silicon, silicon germanium (SiGe), silicon on insulator (SOI), silicon germanium on insulator (SGOI), germanium on insulator (germanium) on insulator...

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Abstract

The invention provides an NOR type flash memory structure with a highly doped drain region and a manufacturing method thereof, and the manufacturing method is mainly as follows: implanting the highly doped drain region by utilizing a highly doped ion implantation process and overlapping with a lightly doped drain region. Therefore, the manufacturing method can reduce the junction depth of the drain regions for improving the short channel effect, and simultaneously avoid the phenomenon of digging through the lightly doped drain region when etching a contact hole.

Description

technical field [0001] The present invention relates to a NOR flash memory structure and a manufacturing method thereof, in particular to a NOR flash memory (flash memory) structure with a highly doped drain region and a manufacturing method thereof. Background technique [0002] Flash memory is a kind of non-volatile (non-volatile) memory, that is, it can save information content even when there is no external power supply, which makes the device itself not need to waste power on data storage, and flash memory also has duplication The characteristics of reading and writing, small size, high capacity and portability make flash memory especially suitable for use in portable devices. At present, the scope of NOR-type flash memory application, in addition to the motherboard on the personal computer will use NOR-type flash memory to store BIOS data, mobile phones, handheld devices will also use NOR-type flash memory to store system data, through its high-speed reading speed, mee...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L21/8247H01L21/265
Inventor 吴怡德李永忠陈宜秀
Owner EON SILICON SOLUTION
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