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Film forming apparatus and film forming method

A film forming device and mounting technology, applied in gaseous chemical plating, coating, electrical components, etc., can solve problems such as unresearched

Inactive Publication Date: 2012-05-09
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In the above-mentioned Patent Documents 1 and 2, the above-mentioned problem has not been studied

Method used

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  • Film forming apparatus and film forming method
  • Film forming apparatus and film forming method
  • Film forming apparatus and film forming method

Examples

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Embodiment Construction

[0050] Next, use Figure 1 to Figure 9 Examples of this application will be described.

[0051] In addition, in the following embodiments, the following reference numerals typically denote the following components.

[0052] W, wafer; 1, vacuum container; 2, rotary table; 4, convex part; D, separation area; 24, concave part; 31, first reaction gas nozzle; 32, second reaction gas nozzle; 41, 42, Separation gas nozzle; 33, ejection hole; P1, processing area; P2, processing area.

[0053] First, refer to Figure 1 to Figure 9 A film forming apparatus as an example of an embodiment of the present invention will be described. In addition, in the figure, as an example, the main part of the film formation apparatus is illustrated as being made of metal, but the material of the main part of the film formation apparatus is not limited to this.

[0054] The film forming device such as figure 1 (along image 3 As shown in the cross-sectional view of the line II' in), it includes: a fl...

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Abstract

The invention provides a film forming apparatus and a film forming method. The film forming apparatus that produces a thin film by repeating cycles of sequentially supplying reaction gases including a loading table in a vacuum vessel having substrate mounting areas; reaction gas supplying units arranged in a peripheral direction with intervals to supply the reaction gases onto substrates; separating areas separating atmospheres of the processing areas; separation gas supplying units supplying separation gases to render a supply amount to outer peripheral side separation areas greater than a supply amount to center side separation areas; a ceiling face surrounding narrow areas together with the loading table to enable the separation gases flow from the separating areas to the processing areas along the center side separation areas and the outer peripheral side separation areas; a vacuum ejecting mechanism; and a rotary mechanism.

Description

technical field [0001] The present invention relates to a film forming apparatus and a film forming method for forming a thin film by sequentially supplying a plurality of reactive gases onto the surface of a substrate in a vacuum atmosphere. Background technique [0002] When silicon dioxide (SiO2) such as silicon dioxide (SiO 2 ) film or the like, a film forming method called ALD (Atomic Layer Deposition, Atomic Layer Deposition), MLD (Molecular Layer Deposition, Molecular Layer Deposition) or the like may be used. As an apparatus for carrying out this film forming method, for example, as described in Patent Documents 1 and 2, there are known structures in which a plurality of processing regions for supplying a plurality of reactant gases that react with each other are arranged along the circumferential direction of the vacuum vessel, and A separation region to which a separation gas (purge gas) is supplied between the processing regions rotates, for example, a susceptor ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45551C23C16/4584C23C16/45578
Inventor 加藤寿竹内靖
Owner TOKYO ELECTRON LTD