Unlock instant, AI-driven research and patent intelligence for your innovation.

Etching apparatus and method of applying same in etching substrate

An etching device and substrate technology, which is applied in chemical/electrolytic methods to remove conductive materials, electrical components, printed circuit manufacturing, etc., can solve the problems of insufficient etching, disconnection, and excessive etching of conductive lines

Inactive Publication Date: 2012-05-16
HONGQISHENG PRECISION ELECTRONICS (QINHUANGDAO) CO LTD +1
View PDF2 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the etching process, after the copper foil surface is etched to form depressions on the surface of the copper foil, the reacted etching solution tends to accumulate in these depressions, thereby preventing unreacted copper etching solution from entering these depressions to continue Etching down the copper foil under the recess, resulting in underetching of the conductive lines
In addition, the etchant after these reactions accumulates in the depression for a long time, which may corrode the copper foil on the side of the depression, resulting in excessive etching on the side of the conductive line and disconnection
This phenomenon is called "pool effect". The pool effect will seriously affect the production of conductive lines, resulting in under-etching or over-etching of conductive lines. Both problems affect the production yield of circuit boards.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching apparatus and method of applying same in etching substrate
  • Etching apparatus and method of applying same in etching substrate
  • Etching apparatus and method of applying same in etching substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0052] The etching device and substrate etching method provided by the technical solution will be further described in detail below with reference to the accompanying drawings and embodiments.

[0053] Please also refer to figure 1 and figure 2 , the etching device 10 provided in the embodiment of the technical solution is used to etch a substrate to form a circuit. The etching device 10 includes an etching tank 100 , a conveying mechanism 12 , a spraying mechanism 14 , a liquid suction mechanism 16 and a controller 18 . The etching tank 100 is used to store etching solution, which is located under the conveying mechanism 12 and communicated with the spraying mechanism 14 .

[0054]The conveying mechanism 12 includes an upper conveying roller set 122 , a lower conveying roller set 124 , an upper auxiliary roller set 126 and a lower auxiliary roller set 128 . The upper conveying roller set 122 is opposite to the lower conveying roller set 124 , and is used for conveying the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an etching apparatus which comprises a transmission mechanism, a spraying mechanism, an imbibing mechanism and a controller, wherein, the transmission mechanism comprises an upper transfer roller set and a lower transfer roller set, which are used for transmission of a substrate, the spraying mechanism comprises a first spray pump and a plurality of upper nozzles which are located above the upper transfer roller set and used for spraying an etching solution on the surface of the substrate, when the first spray pump is unlatched, the first spray pump conveys the etching solution to the upper nozzles, the imbibing mechanism comprises a first imbibing pump and a plurality of upper suction nozzles which are opposite to the lower transfer roller set and close to the substrate, when the first imbibing pump is unlatched, the upper suction nozzles absorbs the etching solution on the surface of the substrate, the first spray pump and the first imbibing pump are both connected with the controller through signals, and the controller is used for controlling the first imbibing pump to be unlatched for a quota time after having controlled the first spray pump to be unlatched for a quota time. The invention also provides a method of applying the etching apparatus in etching a substrate.

Description

technical field [0001] The invention relates to circuit board manufacturing technology, in particular to an etching device and a method for etching a substrate using the etching device. Background technique [0002] In the information, communication and consumer electronics industries, circuit boards are an indispensable and basic component of all electronic products. With the development of electronic products in the direction of miniaturization and high speed, circuit boards are also developing from single-sided circuit boards to double-sided circuit boards and multi-layer circuit boards. Please refer to Takahashi, A. et al. published in IEEE Trans. in 1992. on Components, Packaging, and Manufacturing Technology's literature "High density multilayer printed circuit board for HITACM~880". [0003] Single-sided boards, double-sided boards, and multilayer boards all have conductive traces for transmitting signals. Conductive lines are generally formed by etching copper foil...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/08H05K3/06
CPCH05K2203/1509H05K3/068H05K2203/1545C23F1/08
Inventor 郑建邦
Owner HONGQISHENG PRECISION ELECTRONICS (QINHUANGDAO) CO LTD