Unlock instant, AI-driven research and patent intelligence for your innovation.

Field effect transistor with integrated TJBS diode

A technology of field effect transistors and diodes, applied in the field of power MOS field effect transistors, can solve the problems that cannot be recommended due to quality reasons

Inactive Publication Date: 2012-05-23
ROBERT BOSCH GMBH
View PDF7 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of integrated TMBS diodes, this operation is in principle possible, but cannot be recommended for quality reasons due to the charge carrier injection into the MOS structure of the TMBS that then occurs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Field effect transistor with integrated TJBS diode
  • Field effect transistor with integrated TJBS diode
  • Field effect transistor with integrated TJBS diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] exist figure 2 A first exemplary embodiment of the invention is shown schematically and schematically in cross-section. This is a monolithic integrated structure with MOS field effect transistors and TJBS diodes. at height n + On the doped silicon substrate 1 is an n-doped silicon layer, for example an epitaxial layer 2 , into which a plurality of grooves (trenches) 3 are introduced. Most trenches are again equipped with a thin dielectric layer 4 , mostly consisting of silicon dioxide, at the side walls and at the bottom. At these trenches, the interior is again filled with an electrically conductive material 5 , for example with doped polysilicon. The polysilicon layers 5 are galvanically connected to each other and to gate contacts (not shown).

[0018] Between these trenches there is a p-doped layer (p-well) 6 . At the surface, the height n + Doped region 8 (source) and height p + Doped regions 7 are introduced into this p-doped layer, these regions serving t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor component comprising at least one MOS field effect transistor and one diode is specified, wherein the diode is a trench junction barrier Schottky diode (TJBS) and the arrangement comprising MOS field effect transistor and trench junction barrier Schottky diode (TJBS) is configured as a monolithically integrated structure. The breakdown voltages of the MOS field effect transistor and of the trench junction barrier Schottky diode (TJBS) are in this case chosen in such a way that the MOS field effect transistor can be operated at breakdown.

Description

technical field [0001] The invention relates to a semiconductor device, especially a power semiconductor device, especially a power MOS field effect transistor with an integrated trench junction barrier Schottky (TJBS (Trench Junction Barrier Schottky)) diode. Such power semiconductor components can be used, for example, in synchronous rectifiers of generators in motor vehicles. Background technique [0002] For decades, power MOS field effect transistors have been used as fast switches for applications in power electronics. In addition to planar, double-diffused structures (DMOS), power MOSFETs with trench structures (TrenchMOS) can also be used. However, in the case of applications with very fast switching processes in which the current also flows briefly via the body diode of the MOSFET, e.g. in synchronous rectifiers, DC-DC converters, etc., the conduction and switching of the pn body diode Loss has an adverse effect. As a possible remedy, for example a parallel circu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78
CPCH01L29/8725H01L29/41766H01L29/7813H01L29/1095H01L29/0619H01L21/223H01L29/7806H01L29/872H01L29/04H01L29/66734
Inventor 渠宁A.格尔拉希
Owner ROBERT BOSCH GMBH