Method for preparing Ge-based MOS (metal-oxide semiconductor) capacitor by using ALD (atomic layer deposition)

A capacitor and germanium-based technology, applied in the field of germanium-based MOS capacitors using ALD, can solve the problems of high interface state density, no significant improvement in electron mobility, and imperfect interface, achieving strong interface control ability and improving interface characteristics. , the effect of reducing defect charge and interface state density

Inactive Publication Date: 2012-06-20
FUDAN UNIV
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Problems solved by technology

However, the mobility of holes is not four times higher than that of silicon materials, and the mobility of electrons is not significantly improved, which may be mainly because the interface formed between the gate dielectric and the Ge semiconductor surface is not perfect or the interface state density is too high.

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  • Method for preparing Ge-based MOS (metal-oxide semiconductor) capacitor by using ALD (atomic layer deposition)
  • Method for preparing Ge-based MOS (metal-oxide semiconductor) capacitor by using ALD (atomic layer deposition)
  • Method for preparing Ge-based MOS (metal-oxide semiconductor) capacitor by using ALD (atomic layer deposition)

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Embodiment Construction

[0025] The following combines the manufacturing process of the entire Ge-based MOS capacitor figure 1 The present invention will be further described in detail with specific embodiments. In the drawings, for the convenience of illustration, the thicknesses of layers and regions are enlarged or reduced, and the shown sizes do not represent actual sizes. Although these figures do not fully reflect the actual size of the device, they still fully reflect the interrelationships between the regions and the constituent structures.

[0026] Step 1: Select a commercial single crystal Ge wafer, n-type Sb doped, crystal orientation (100), resistivity 0.21-0.26 Ω·cm as the substrate, namely figure 2 101 layer in , but there will be a layer of naturally oxidized GeO on the surface of Ge substrate without cleaning x ,Right now figure 2 102 floors in;

[0027] Step 2: Soak the substrate in ethanol for 10 min;

[0028] Step 3: put the substrate into acetone and ultrasonically clean it f...

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Abstract

The invention belongs to the technical field of semiconductors, and specifically relates to a method for preparing a Ge-based MOS (metal-oxide semiconductor) capacitor by using ALD (atomic layer deposition). The method disclosed by the invention comprises the following steps of: firstly, performing rapid thermal oxidization treatment on a Ge-based substrate to form GeO2; secondly, depositing high-dielectric-constant HfO2 on the GeO2 to serve as a gate dielectric; and finally, manufacturing an electrode to form the Ge-based MOS capacitor. According to the method disclosed by the invention, a layer of high-quality GeO2 is formed on the surface of the Ge-based substrate by adopting a rapid thermal oxidization treatment method, so that Ge can be prevented from diffusing, defect charges and the density of interface state are reduced, and the interface characteristics are improved; and the deposited HfO2 dielectric layer is accurately-controllable in thickness, excellent in conformality, strong in interface controllability and good in uniformity. By adoption of the method disclosed by the invention, the electrical properties of the Ge-based MOS capacitor can be greatly improved, and then the performance of a Ge-based MOS transistor is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for making germanium-based MOS capacitors by using ALD. Background technique [0002] Since the 1960s, silicon has been the most important semiconductor material in the modern electronics industry, mainly due to the fact that it forms very high-quality native oxides for surface passivation. After more than 40 years of continuous miniaturization, the scaling of the classic bulk MOSFET is approaching many of its fundamental limits, requiring innovations in new materials and new device structures. [0003] High dielectric constant (k) materials can relax the restriction on the physical thickness of the dielectric by k / 3.9 times, and its research in the field of silicon-based integrated circuits has made a lot of progress. Intel has combined high-k gate dielectric materials and metal gates It has been applied to the CPU manufacturing technology of its 45 ...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/94H01L21/02
Inventor卢红亮耿阳孙清清王鹏飞张卫
OwnerFUDAN UNIV