Storage device and refreshing method for same

Abstract

An embodiment of the invention provides a storage device and a refreshing method for the same. The refreshing method for the storage device includes the steps: determining storage blocks needing read-write operation in a current time slice in a current refreshing period according to storage block identifiers included in access requests; in the current time slice, refreshing other storage blocks except for the storage blocks needing the read-write operation in the to-be-selected storage blocks in the current time slice; and taking the storage blocks without being refreshed in the current time slice as the to-be-selected storage blocks for other time slices in the current refreshing period. The method and the device in the embodiment have the advantages that the refreshing process and the read-write process are mutually uninfluenced, therefore, delay of the read-write operation is not needed, and access performance of the storage device is improved.

Description

technical field [0001] Embodiments of the present invention relate to storage technologies, and in particular, to a method for refreshing a storage device and the storage device. Background technique [0002] Embedded Dynamic Random Access Memory (Embedded Dynamic Random Access Memory, hereinafter referred to as eDRAM) is a memory with ideal performance in all aspects. While possessing the high speed and large capacity characteristics of Dynamic Random Access Memory (Dynamic Random Access Memory, hereinafter referred to as: DRAM), it can also be used with most Static Random Access Memory (hereinafter referred to as: SRAM) Ordinary logic circuits are integrated in one chip, which better achieves low latency. [0003] The data reading and writing process of eDRAM is: when the write enable signal WR is high, the write address signal WR_ADDR and the write data signal WR_DATA are valid inputs, and after the rising edge of the clock, the data corresponding to WR_DATA is written i...

AI Technical Summary

Problems solved by technology

The refresh operation of eDRAM is divided according to the storage block (hereinafter referred to as: bank). The refresh of the storage unit in the bank is automatically completed by the internal circuit of the memory. Specifically, the access controller can perform the refresh operation in sequence according to the bank number. If the bank number of the read and write operation is the same as the bank number of the refresh operation, the read and write operations need to be delayed, resulting in reduced eDRAM access performance

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