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A right-hand nonlinear transmission line microwave frequency multiplication circuit and its manufacturing method

A non-linear transmission line and frequency doubling circuit technology, which is applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc. The effect of optimizing the circuit structure

Active Publication Date: 2014-10-22
北京中科微投资管理有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The structural circuit has the following fixed defects: via hole and back gold process need to be used; the Schottky diode is reversed or surface-mounted on the high-frequency substrate; a bias circuit needs to be provided for the Schottky diode; The external bias voltage of the base diode has a great influence

Method used

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  • A right-hand nonlinear transmission line microwave frequency multiplication circuit and its manufacturing method
  • A right-hand nonlinear transmission line microwave frequency multiplication circuit and its manufacturing method
  • A right-hand nonlinear transmission line microwave frequency multiplication circuit and its manufacturing method

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Embodiment Construction

[0038] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0039] Such as figure 1 as shown, figure 1 A right-hand nonlinear transmission line microwave frequency multiplication circuit provided for the embodiment of the present invention, the circuit is composed of 23 right-hand nonlinear transmission line units connected in series, and each right-hand nonlinear transmission line unit is composed of a parallel Schottky diode and two series composed of the same transmission line as figure 2 shown. The transmission line is equivalent to the series inductance in the right-hand transmission line, which constitutes a typical right-hand nonlinear transmission line cascaded by series inductance and parallel capacitance. In each right-hand nonlinear transmission line, the relationship between the capacitance of the Schottky diode used and the applied bias voltage is: C=250fF / (1-V / 0.65) ...

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Abstract

The invention relates to the microwave circuit technology field in micro-electronics and especially relates to a right-hand nonlinear transmission line microwave frequency multiplication circuit based on a plane schottky diode and a manufacturing method thereof. A right-hand nonlinear transmission line microwave frequency multiplication circuit is formed by 23 right-hand nonlinear transmission line units which are connected in series with each other. The each right-hand nonlinear transmission line unit is formed by the parallel schottky diodes and two segments of the same transmission lines which are connected in series. By using the right-hand nonlinear transmission line microwave frequency multiplication circuit provided in the invention, a circuit structure can be optimized; a peripheral bias circuit can be simplified. By using the manufacturing method of the right-hand nonlinear transmission line microwave frequency multiplication circuit provided in the invention, a corresponding circuit manufacturing technology can be simplified so as to improve harmonic output power of the frequency multiplication circuit. Harmonic wave conversion efficiency can be increased. A narrow-band harmonic-wave output characteristic can be improved and a harmonic wave output purity can be increased too. The method has many other characteristics.

Description

technical field [0001] The invention relates to the technical field of microwave circuits in microelectronics, in particular to a right-hand nonlinear transmission line microwave frequency doubling circuit based on planar Schottky diodes and a manufacturing method thereof. Background technique [0002] As the operating frequency of the system extends to the microwave and millimeter wave bands, the frequency is required to be higher and higher. However, due to the influence of devices, output power and other factors, there is often a lack of stable and effective signal sources in the microwave frequency band, which requires the frequency to be higher. Low-frequency signal sources with low power, high output power and high frequency stability are frequency-multiplied by nonlinear devices, such as varactor diodes, high electron mobility transistors, and heterojunction bipolar transistors. High-frequency frequency multipliers are widely used in the generation of microwave signal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03B19/00H01L21/8252H01L21/329
Inventor 黄杰董军荣杨浩张海英田超
Owner 北京中科微投资管理有限责任公司
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