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Light absorption transparent thin film of solar battery

A technology of solar cells and transparent films, applied in the field of solar power generation, can solve problems such as waste of solar radiation energy, achieve the effects of improving photoelectric conversion efficiency and reducing thermalization effects

Inactive Publication Date: 2012-10-10
SUZHOU JIAYAN ENERGY EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the restriction of the semiconductor silicon band gap, about 30% of the solar radiation energy is wasted due to heat loss, which has become one of the bottlenecks restricting the improvement of solar cell efficiency.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Zinc oxide doped with 0.5wt% La was used as the target material, and the film was coated by an intermediate frequency reaction vertical magnetron sputtering coating equipment.

[0015] Taking the silicon wafer as the substrate, the silicon wafer is firstly cleaned, dried and put into the coating chamber, and O2 with a purity of 99.99% is introduced, the flow rate is 150 sccm, the voltage is 800 V, the current is 25 A, and the substrate temperature is The temperature is 300°C, and the working pressure is 0.5Pa.

Embodiment 2

[0017] Zinc oxide doped with 1.2wt%La was used as the target material, and the film was coated by an intermediate frequency reaction vertical magnetron sputtering coating equipment.

[0018] Taking the silicon wafer as the substrate, firstly clean the silicon wafer, dry it and put it into the coating chamber, feed O2 with a purity of 99.99%, the flow rate is 150 sccm, the voltage is 800 V, the current is 30 A, the substrate temperature The temperature is 450℃, and the working pressure is 0.5Pa.

Embodiment 3

[0020] Zinc oxide doped with 0.8wt% La was used as the target material, and the film was coated by an intermediate frequency reaction vertical magnetron sputtering coating equipment.

[0021] Taking the silicon wafer as the substrate, firstly clean the silicon wafer, dry it and put it into the coating chamber, feed O2 with a purity of 99.99%, the flow rate is 150 sccm, the voltage is 800 V, the current is 30 A, the substrate temperature The temperature is 450℃, and the working pressure is 0.5Pa.

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Abstract

The invention relates to a light absorption transparent thin film of a solar battery. The transparent thin film is a zinc oxide thin film doped with La, wherein the content of La is 0.5-1.25wt%. The transmittance of the transparent thin film doped with rare earth elements to electromagnetic waves with the wavelength of 300-900 nm is more than 90%. The transparent thin film disclosed by the invention is deposited on the upper surface of a silicon solar battery, so that the thermalization effect of the silicon solar battery can be reduced and the photoelectric conversion efficiency of the battery is improved.

Description

technical field [0001] The invention belongs to the technical field of solar power generation, and more specifically, the invention relates to a solar cell light-absorbing transparent film. Background technique [0002] With the depletion of traditional energy sources and the aggravation of environmental pollution, the development and application of new energy sources has become a hot spot in human research. Inexhaustible, green and pollution-free solar energy is one of the key points in the development and utilization of new energy. [0003] Solar thermal power generation is an important technical approach for large-scale development and utilization of solar energy. At present, there are tower, trough, and dish systems, among which trough and tower systems are more commercially used, especially trough solar thermal power generation, which is the most popular so far. So far, it is the only mature technology in the world that has been commercialized for 20 years, and its cos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216
Inventor 葛波
Owner SUZHOU JIAYAN ENERGY EQUIP
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