Antireflection film for trough type solar collector tube
A trough-type solar energy and anti-reflection film technology, which is applied in the field of solar power generation, can solve the problems of too large a change in the refractive index, difficult control of the refractive index and thickness, and unfavorable mass production, etc., to reduce thermal effects and improve photoelectric conversion efficiency effect
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Embodiment 1
[0014] Pure aluminum sheet is used as the target material, and the film is coated by intermediate frequency reaction vertical magnetron sputtering coating equipment.
[0015] With the silicon wafer as the substrate, the aluminum sheet is first cleaned, dried and put into the coating chamber, and N with a purity of 99.99% is introduced 2 , the flow rate is 50-100 sccm, the voltage is 800 V, the current is 20 A, the substrate temperature is 100 °C, and the working pressure is 10 Pa. After the sputtering deposition is completed, it is annealed at 300 °C for 30 min in a reducing atmosphere.
Embodiment 2
[0017] Pure aluminum sheet is used as the target material, and the film is coated by intermediate frequency reaction vertical magnetron sputtering coating equipment.
[0018] With the silicon wafer as the substrate, the aluminum sheet is first cleaned, dried and put into the coating chamber, and N2 with a purity of 99.99% is introduced, the flow rate is 50-100 sccm, the voltage is 800 V, and the current is 20 A. The substrate temperature was 150 °C, the working pressure was 10 Pa, and after the sputtering deposition was completed, annealing treatment was performed at 200 °C for 90 min in a reducing atmosphere.
Embodiment 3
[0020] Pure aluminum sheet is used as the target material, and the film is coated by intermediate frequency reaction vertical magnetron sputtering coating equipment.
[0021] With the silicon wafer as the substrate, the aluminum sheet is first cleaned, dried and put into the coating chamber, and N2 with a purity of 99.99% is introduced, the flow rate is 50-100 sccm, the voltage is 800 V, and the current is 20 A. The substrate temperature was 150°C, and the working pressure was 10Pa. After the sputtering deposition was completed, annealing treatment was performed at 250°C for 30 min in a reducing atmosphere.
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