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Light-absorption transparent thin film of thin film solar cell

A technology of solar cells and transparent films, applied in the field of solar power generation, can solve the problem of waste of solar radiation energy, and achieve the effect of improving photoelectric conversion efficiency and reducing thermalization effect.

Inactive Publication Date: 2012-10-10
SUZHOU JIAYAN ENERGY EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the restriction of the semiconductor silicon band gap, about 30% of the solar radiation energy is wasted due to heat loss, which has become one of the bottlenecks restricting the improvement of solar cell efficiency.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Indium oxide doped with 0.5wt% Ce is used as the target material, and the film is coated by an intermediate frequency reaction vertical magnetron sputtering coating equipment.

[0015] Taking the silicon wafer as the substrate, the silicon wafer is firstly cleaned, dried and put into the coating chamber, and O2 with a purity of 99.99% is introduced, the flow rate is 150 sccm, the voltage is 800 V, the current is 25 A, and the substrate temperature is The temperature is 300°C, and the working pressure is 0.5Pa.

Embodiment 2

[0017] Indium oxide doped with 1.2wt% Ce was used as the target material, and the film was coated by an intermediate frequency reaction vertical magnetron sputtering coating equipment.

[0018] Taking the silicon wafer as the substrate, firstly clean the silicon wafer, dry it and put it into the coating chamber, feed O2 with a purity of 99.99%, the flow rate is 150 sccm, the voltage is 800 V, the current is 30 A, the substrate temperature The temperature is 450℃, and the working pressure is 0.5Pa.

Embodiment 3

[0020] Indium oxide doped with 0.8wt% Ce is used as the target material, and the film is coated by an intermediate frequency reaction vertical magnetron sputtering coating equipment.

[0021] Taking the silicon wafer as the substrate, firstly clean the silicon wafer, dry it and put it into the coating chamber, feed O2 with a purity of 99.99%, the flow rate is 150 sccm, the voltage is 800 V, the current is 30 A, the substrate temperature The temperature is 450℃, and the working pressure is 0.5Pa.

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Abstract

The invention relates to a light-absorption transparent thin film of a thin film solar cell. The transparent thin film is a cerium-doped (Ce-doped) indium oxide thin film, wherein the content of Ce is between 0.2 weight percent and 0.75 weight percent. Over 90 percent of electromagnetic wave with wavelength of 300 to 900 nm can penetrate through the transparent thin film which is doped with rare-earth elements. By depositing the transparent thin film on the upper surface of a silicon solar cell, a thermalization effect of the silicon solar cell can be reduced, and the photoelectric conversion efficiency of the cell is improved.

Description

technical field [0001] The invention belongs to the technical field of solar power generation, and more specifically, the invention relates to a light-absorbing transparent film of a thin-film solar cell. Background technique [0002] With the depletion of traditional energy sources and the aggravation of environmental pollution, the development and application of new energy sources has become a hot spot in human research. Inexhaustible, green and pollution-free solar energy is one of the key points in the development and utilization of new energy. [0003] Solar thermal power generation is an important technical approach for large-scale development and utilization of solar energy. At present, there are tower, trough, and dish systems, among which trough and tower systems are more commercially used, especially trough solar thermal power generation, which is the most popular so far. So far, it is the only mature technology in the world that has been commercialized for 20 yea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216
Inventor 葛波
Owner SUZHOU JIAYAN ENERGY EQUIP
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