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Light absorption transparent thin film of thin film solar battery

A technology of solar cells and transparent films, applied in the field of solar power generation, can solve the problem of waste of solar radiation energy, and achieve the effect of improving photoelectric conversion efficiency and reducing thermalization effect.

Inactive Publication Date: 2012-10-10
SUZHOU JIAYAN ENERGY EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the restriction of the semiconductor silicon band gap, about 30% of the solar radiation energy is wasted due to heat loss, which has become one of the bottlenecks restricting the improvement of solar cell efficiency.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Tin dioxide doped with 0.5wt% Y is used as the target material, and the film is coated by an intermediate frequency reaction vertical magnetron sputtering coating equipment.

[0015] Taking the silicon wafer as the substrate, firstly clean the silicon wafer, dry it, put it into the coating chamber, feed O2 with a purity of 99.99%, the flow rate is 150 sccm, the voltage is 800 V, the current is 20 A, the substrate temperature The temperature is 300°C, and the working pressure is 0.5Pa.

Embodiment 2

[0017] Tin dioxide doped with 0.5wt% Y is used as the target material, and the film is coated by an intermediate frequency reaction vertical magnetron sputtering coating equipment.

[0018] With the silicon wafer as the substrate, the silicon wafer is first cleaned, dried and put into the coating chamber, and O with a purity of 99.99% is introduced 2 , the flow rate is 150 sccm, the voltage is 700 V, the current is 30 A, the substrate temperature is 350 ° C, and the working pressure is 0.5 Pa.

Embodiment 3

[0020] Tin dioxide doped with 0.8wt% Y is used as the target material, and the film is coated by an intermediate frequency reaction vertical magnetron sputtering coating equipment.

[0021] Taking the silicon wafer as the substrate, firstly clean the silicon wafer, dry it and put it into the coating chamber, feed O2 with a purity of 99.99%, the flow rate is 100 sccm, the voltage is 600 V, the current is 30 A, the substrate temperature The temperature is 400°C, and the working pressure is 0.8Pa.

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Abstract

The invention relates to a light absorption transparent thin film of a thin film solar battery. The transparent thin film is a tin oxide thin film doped with Y, wherein the content of Y is 0.25-0.50wt%. The transmittance of the transparent thin film doped with rare earth elements to electromagnetic waves with the wavelength of 300-900 nm is more than 90%. The transparent thin film disclosed by the invention is deposited on the upper surface of a silicon solar battery, so that the thermalization effect of the silicon solar battery can be reduced and the photoelectric conversion efficiency of the battery is improved.

Description

technical field [0001] The invention belongs to the technical field of solar power generation, and more specifically, the invention relates to a light-absorbing transparent film of a thin-film solar cell. Background technique [0002] With the depletion of traditional energy sources and the aggravation of environmental pollution, the development and application of new energy sources has become a hot spot in human research. Inexhaustible, green and pollution-free solar energy is one of the key points in the development and utilization of new energy. [0003] Solar thermal power generation is an important technical approach for large-scale development and utilization of solar energy. At present, there are tower, trough, and dish systems, among which trough and tower systems are more commercially used, especially trough solar thermal power generation, which is the most popular so far. So far, it is the only mature technology in the world that has been commercialized for 20 yea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/0352
Inventor 葛波
Owner SUZHOU JIAYAN ENERGY EQUIP
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