Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Solar photoelectric conversion transparent thin film

A transparent film, photoelectric conversion technology, applied in the field of solar power generation, can solve the problem of waste of solar radiation energy, and achieve the effect of improving photoelectric conversion efficiency and reducing thermal effect.

Inactive Publication Date: 2012-10-10
SUZHOU JIAYAN ENERGY EQUIP
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the restriction of the semiconductor silicon band gap, about 30% of the solar radiation energy is wasted due to heat loss, which has become one of the bottlenecks restricting the improvement of solar cell efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] Zinc oxide doped with 0.15wt% La and indium oxide with a purity of 99.99% were used as targets, and a medium frequency reaction vertical magnetron sputtering coating equipment was used for coating.

[0015] With the silicon wafer as the substrate, the silicon wafer is first cleaned, dried and put into the coating chamber, and O with a purity of 99.99% is introduced 2 , the flow rate is 150 sccm, the voltage is 800 V, the current is 25 A, the substrate temperature is 300 ° C, and the working pressure is 0.5 Pa. By controlling the sputtering speed of each target, a transparent film with the required composition and ratio is deposited.

Embodiment 2

[0017] Zinc oxide doped with 0.25wt% La and indium oxide with a purity of 99.99% were used as targets, and a medium frequency reaction vertical magnetron sputtering coating equipment was used for coating.

[0018] Taking the silicon wafer as the substrate, the silicon wafer is firstly cleaned, dried and put into the coating chamber, and O2 with a purity of 99.99% is introduced, the flow rate is 150 sccm, the voltage is 800 V, the current is 25 A, and the substrate temperature is The temperature is 400°C, and the working pressure is 0.5Pa. By controlling the sputtering speed of each target, a transparent film with the required composition and ratio is deposited.

Embodiment 3

[0020] Zinc oxide doped with 0.20wt% La and indium oxide with a purity of 99.99% were used as targets, and a medium frequency reaction vertical magnetron sputtering coating equipment was used for coating.

[0021] Taking the silicon wafer as the substrate, the silicon wafer is firstly cleaned, dried and put into the coating chamber, and O2 with a purity of 99.99% is introduced, the flow rate is 150 sccm, the voltage is 800 V, the current is 25 A, and the substrate temperature is The temperature is 500°C, and the working pressure is 0.5Pa. By controlling the sputtering speed of each target, a transparent film with the required composition and ratio is deposited.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a solar photoelectric conversion transparent thin film, which comprises 15 to 22.5 weight percent of indium oxide, 0.15 to 0.25 weight percent of lanthanum (La) and the balance of zinc oxide. Over 90 percent of electromagnetic wave with wavelength of 300 to 900 nm can penetrate through the transparent thin film which is doped with rare-earth elements. By depositing the transparent thin film on the upper surface of a silicon solar cell, a thermalization effect of the silicon solar cell can be reduced, and the photoelectric conversion efficiency of the cell is improved.

Description

technical field [0001] The invention belongs to the technical field of solar power generation, and more specifically, the invention relates to a solar photoelectric conversion transparent film. Background technique [0002] With the depletion of traditional energy sources and the aggravation of environmental pollution, the development and application of new energy sources has become a hot spot in human research. Inexhaustible, green and pollution-free solar energy is one of the key points in the development and utilization of new energy. [0003] Solar thermal power generation is an important technical approach for large-scale development and utilization of solar energy. At present, there are tower, trough, and dish systems, among which trough and tower systems are more commercially used, especially trough solar thermal power generation, which is the most popular so far. So far, it is the only mature technology in the world that has been commercialized for 20 years, and its...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/0352
Inventor 葛波
Owner SUZHOU JIAYAN ENERGY EQUIP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com