Antireflective film for groove-type solar thermal collector
A trough solar energy and anti-reflection film technology, applied in the field of solar power generation, can solve the problems of too large refractive index change, difficult control of refractive index and thickness, and unfavorable large-scale production, so as to reduce the thermal effect and improve the photoelectric conversion. The effect of efficiency
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Embodiment 1
[0014] The pure titanium plate is used as the target material, and the intermediate frequency reaction vertical magnetron sputtering coating equipment is used for coating.
[0015] With the silicon wafer as the substrate, the silicon wafer is first cleaned, dried and put into the coating chamber, and O with a purity of 99.99% is introduced 2 , the flow rate is 50-150 sccm, the voltage is 800 V, the current is 20 A, the substrate temperature is 300 °C, and the working pressure is 0.5 Pa. After the sputtering deposition is completed, it is annealed at 450 °C for 1.5 h in a reducing atmosphere.
Embodiment 2
[0017] The pure titanium plate is used as the target material, and the intermediate frequency reaction vertical magnetron sputtering coating equipment is used for coating.
[0018] With the silicon wafer as the substrate, the silicon wafer is first cleaned, dried and put into the coating chamber, and O with a purity of 99.99% is introduced 2 , the flow rate is 50-150 sccm, the voltage is 700 V, the current is 20 A, the substrate temperature is 400 ° C, the working pressure is 0.5 Pa, and after the sputtering deposition is completed, it is annealed at 400 ° C for 1 h in a reducing atmosphere.
Embodiment 3
[0020] The pure titanium plate is used as the target material, and the intermediate frequency reaction vertical magnetron sputtering coating equipment is used for coating.
[0021] With the silicon wafer as the substrate, the silicon wafer is first cleaned, dried and put into the coating chamber, and O with a purity of 99.99% is introduced 2 , the flow rate is 50-150 sccm, the voltage is 600 V, the current is 20 A, the substrate temperature is 500 ° C, the working pressure is 0.5 Pa, and after the sputtering deposition is completed, it is annealed at 500 ° C for 0.5 h in a reducing atmosphere.
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