Compact terahertz power synthesis frequency multiplier circuit

Abstract

The invention discloses a compact terahertz power synthesis frequency multiplier circuit which comprises an upper metal substrate and a lower metal substrate, wherein a cavity formed by the upper and lower metal substrates is internally provided with an input waveguide structure, a synthesizing channel, an output waveguide structure and a direct current biasing circuit which are in the same structure, respectively, wherein one end of the synthesizing channel is connected with the input waveguide structure while the other end of the synthesizing channel is connected to the output waveguide structure; the synthesizing channel is internally provided with two thin film chips symmetrical in mirror; and one group of the thin film chips is connected to the upper metal substrate while the other group of the thin film chips is connected to the lower metal substrate. The direct current biasing circuit is provided with chip capacitors connected with the thin film chips. Based on a micro / nano technology, the compact terahertz power synthesis frequency multiplier circuit has the characteristics of compact structure and high integrating degree. The compact terahertz power synthesis frequency multiplier circuit has the characteristics of good port performance and higher power. The compact terahertz power synthesis frequency multiplier circuit has the characteristics of low cost and good consistency and is convenient for large-scale production.

Description

technical field [0001] The present invention relates to a terahertz frequency multiplication circuit based on micro-nano integrated manufacturing technology, in particular to a compact terahertz power synthesis frequency multiplication circuit. Background technique [0002] Terahertz waves (Terahertz, THz for short) generally refer to electromagnetic waves with a frequency in the range of 0.1 THz to 10 THz (wavelength of 30 μm to 3 mm). 1THz (10 12 Hz) corresponds to a wave number of 33.3cm -1 , the energy is 4.1meV, and the wavelength is 300μm. From the perspective of spectrum, terahertz waves are between microwave and infrared in the electromagnetic spectrum, in the transition zone from electronics to photonics, and in the transition zone from macroscopic classical theory to microscopic quantum theory. In the field of electronics, terahertz waves are called submillimeter waves; in the field of optics, they are also called far-infrared rays; in terms of energy, the energ...

AI Technical Summary

Problems solved by technology

[0004] In the theory of terahertz frequency multiplication, in order to obtain greater output power, it is generally necessary to increase the input power, but the frequency multiplication efficiency is related to the input power. Excessively high input power will easily lead to device saturation, which will greatly reduce the frequency multiplication efficiency, and even cause The barrier reverses breakdown and the device is damaged

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