Hybrid storage device, its control method, and manufacturing method

Abstract

The invention discloses a hybrid memory device, and a control method and a preparation method thereof. The hybrid memory device comprises a ferroelectric memory cell and a resistance random access memory cell formed on a drain electrode of the ferroelectric memory cell. The hybrid memory device is switched between the two memory modes. In a first memory mode, the resistance random access memory cell is used as a memory module and the ferroelectric memory cell is used as a gating module; and in a second memory mode, the resistance random access memory cell is in a low resistance state and the ferroelectric memory cell is used as used as the memory module. The hybrid memory device takes the advantages of a FeRAM memory mode and an RRAM memory mode comprehensively and two different modes are realized on a single chip, thereby meeting memory needs of different modes.

Description

technical field

[0001] The invention relates to the technical field of memory in the microelectronics industry, and in particular to a hybrid memory device capable of realizing the combination of two storage modes—ferroelectric storage mode and resistive storage mode, as well as a control method and a preparation method thereof. Background technique

[0002] The current semiconductor memory market is represented by volatile dynamic random access memory (DRAM), static random access memory (SRAM) and non-volatile "flash memory" memory (Flash). With the development and popularization of various portable digital products such as mobile storage devices, mobile phone communication devices, and digital cameras, the market demand for non-volatile data storage has further increased. In order to improve storage density and data storage reliability, based on traditional floating gate Structured Flash memory is facing severe challenges. To this end, the industry has conducted a lot of ...

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