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A kind of surface treatment method of epitaxial insb substrate
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A surface treatment and substrate technology, applied in the field of surface treatment of epitaxial InSb substrates, can solve the problems of high technical equipment requirements, inappropriate application of molecular beam epitaxy technology for small batch experimental production, etc., to avoid surface roughness changes. poor effect
Active Publication Date: 2016-07-06
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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However, this process requires high technical equipment and is not suitable for small batch experimental production such as molecular beam epitaxy.
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Embodiment 1
[0020] Such as figure 1 As shown, the embodiment of the present invention provides a surface treatment method of an epitaxial InSb substrate, comprising:
[0021] Step S101, cleaning the InSb wafer to be processed, and drying the cleaned InSb wafer;
[0022] Step S102, preparing an etching solution, and putting the dried InSb wafer into the etching solution for wet chemical treatment; wherein, the prepared etching solution is bromine-methanol with a ratio of 0.05% to 10%, or HNO 3 :HF:CH 3 COOH:DIH 2 CP4 system solution with O ratio of 1~5:0.5~5:0.5~5:5~100;
[0023] Preferably, in this step, after the etching solution is prepared, the prepared etching solution is left to stand for 10 minutes to 60 minutes, and then the InSb wafer is put into the etching solution for wet chemical treatment. This static operation can increase the reaction time of the proportioning materials in the corrosion solution, making the corrosion solution more uniform and stable.
[0024] Preferabl...
Embodiment 2
[0029] An embodiment of the present invention provides a surface treatment method for an epitaxial InSb substrate. The basic principle of this embodiment is the same as that of Embodiment 1, and it is a further detailed explanation of the method described in Embodiment 1 with reference to the accompanying drawings. Such as figure 2 As shown, it specifically includes the following steps:
[0030] Step 1: Before the wet chemical treatment, the InSb polished wafer needs to be thoroughly cleaned to remove impurities such as residual wax and surface organic matter residues, metal ions, and particle sticking dirt on the wafer after the mechanochemical polishing process, so as to avoid subsequent The corrosion effect is affected during the wet chemical treatment process, causing secondary pollution.
[0031] Step 2, drying the InSb wafer to avoid water spots. Drying can be done by spin drying or IPA drying.
[0032] Step 3. Prepare the corrosion solution in the container accordin...
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Abstract
The invention discloses a method for treating surfaces of epitaxial InSb substrates. The method includes steps of 1, cleaning a to-be-treated InSb wafer and drying the cleaned InSb wafer; 2, preparing corrosive liquid, placing the dried InSb wafer into the corrosive liquid and performing wet-chemical treatment for the InSb wafer; and 3, flushing the InSb wafer after the InSb wafer is subjected to wet-chemical treatment and drying the flushed InSb wafer to obtain an InSb wafer with treated surfaces. The prepared corrosive liquid comprises 0.05-10% of bromine-methanol or CP4 system solution, and a ratio of HNO<3>:HF:CH<3>COOH:DI H<2>O of the CP4 system solution is 1-5:0.5-5:0.5-5:5-100. The method has the advantages that a new oxide layer can be formed on each surface of the InSb wafer while a natural oxide layer on the surface of the wafer is removed, the oxide layers are thin, and the deoxidization temperature is greatly reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a surface treatment method for an epitaxial InSb substrate. Background technique [0002] Due to the advantages of uniform growth, in-situ doping and real-time control, molecular beam epitaxy is favored by more and more material researchers. In recent years, with the in-depth study of energy band engineering and the gradual development and maturity of molecular beam epitaxy, a series of new materials based on molecular beam epitaxy, such as superlattice and quantum well, have emerged. As a stable III-V binary compound semiconductor material, InSb has a relatively mature preparation process, is easy to obtain high-quality materials with extremely low dislocation density, and can obtain large-area wafer materials. Therefore, it is an ideal epitaxial substrate material. In addition, the lattice constant of InSb has a very low mismatch with various epitaxial materials such a...
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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 程鹏赵超刘铭
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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