A biaxially textured buffer layer structure
A buffer layer and texture technology, applied in superconducting devices, superconducting/high-conducting conductors, electrical components, etc., can solve problems such as difficult surface roughness, superconducting current drop, weak connection, etc., and reduce production steps , short atomic bonds, and the effect of improving yield
Active Publication Date: 2017-05-24
SUZHOU NEW MATERIAL INST +2
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Problems solved by technology
The coherence length of the second-generation high-temperature superconducting materials is only on the order of nanometers. When the angle between the grains of the superconducting film is greater than 4 degrees, a weak connection is formed, resulting in a rapid decrease in the superconducting current passing through the grain boundary.
Magnetron sputtering with a high deposition rate has a high discharge power per unit area, which makes the deposition temperature on the surface of the film higher, making it easier to crystallize, and it is more difficult to obtain yttrium oxide without deteriorating surface roughness
[0009] Paul also teaches other seed layers such as ErO in his patent 2 , EuO 2 , CeO 2 , YSZ et al. Iijima reported using Gd 2 Zr 2 o 7 Good IBAD MgO texture can also be obtained as a seed layer, but all these oxides, like yttrium oxide, have the problem of easy crystallization
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[0034] The above solution will be further described below in conjunction with specific embodiments. It should be understood that these examples are used to illustrate the present invention and not to limit the scope of the present invention. The implementation conditions used in the examples can be further adjusted according to the conditions of specific manufacturers, and the implementation conditions not indicated are usually the conditions in routine experiments.
[0035] The choice of the substrate mainly depends on the application requirements of the biaxially textured buffer layer and the requirements on the growth conditions of the subsequent epitaxial layer. Depending on the application considerations, metallic materials, semiconductor materials, ceramic materials, glass materials, etc. can be used. In principle, all solid materials can be used as the substrate of the present invention, even plastic substrates can be used as the substrate of the present invention. Sp...
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Abstract
The invention discloses a biaxial texture buffer layer structure including a substrate having a smooth surface. A layer of beryllia film as a seed layer and / or a blocking layer is deposited on a substrate. A film with a biaxial texture is deposited on the beryllia film. According to the invention, the beryllia is adopted as the seed layer, so that a problem that roughness of a yttria surface becomes poor is solved and band yield is improved. The beryllia acts as the blocking layer and the seed layer at the same time, so that technical steps are simplified and production efficiency is improved.
Description
technical field [0001] The invention relates to the technical field of functional materials, in particular to a biaxial texture buffer layer structure. Background technique [0002] The second-generation high-temperature superconducting tape is also called a coated conductor because its production method is mainly thin film coating technology. [0003] Superconducting materials have completely zero resistance and complete diamagnetic characteristics at low temperatures. The huge application prospects of its non-resistance and diamagnetic properties in the fields of industry, national defense, scientific research, and medicine have made governments of all countries attach great importance to the development and research of superconducting technology. The superconducting transition temperature of the first discovered superconducting material is very low, between a few K and 23K, and it can only work under liquid helium. Maintaining the temperature of liquid helium requires a ...
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IPC IPC(8): H01B12/06H01B13/00
CPCY02E40/60
Inventor 张贺蔡渊古宏伟谢义元庄维伟张少斌桑洪波王延凯戴辉其他发明人请求不公开姓名
Owner SUZHOU NEW MATERIAL INST