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Non-volatile storage element and non-volatile storage device

A non-volatile storage and memory cell technology, applied in electrical components, information storage, static memory, etc., can solve the problems of increased resistance change layer deviation and resistance change characteristic deviation, and achieve the resistance change characteristic deviation. small effect

Active Publication Date: 2015-11-25
PANASONIC SEMICON SOLUTIONS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The variable resistance element having such filaments has the problem that the variation in the resistance value of the variable resistance layer during the resistance variation increases, and the variation in the resistance variation characteristic increases.

Method used

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  • Non-volatile storage element and non-volatile storage device
  • Non-volatile storage element and non-volatile storage device
  • Non-volatile storage element and non-volatile storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0069] [Structure of nonvolatile memory element]

[0070] figure 1 It is a cross-sectional view showing a configuration example of the nonvolatile memory element according to Embodiment 1 of the present invention.

[0071] The nonvolatile memory element 100 of this embodiment includes: a substrate 101, an interlayer insulating film 102 formed on the substrate 101, a first electrode 103 formed on the interlayer insulating film 102, a second electrode 106, and a The variable resistance layer 104 sandwiched between the first electrode 103 and the second electrode 106 .

[0072] The variable resistance layer 104 is composed of a metal oxide (metal oxide) sandwiched between the first electrode 103 and the second electrode 106, and the resistance value can be changed according to the voltage applied between the first electrode 103 and the second electrode 106. signal to reversibly change layers. For example, the resistance state of the metal oxide of the variable resistance laye...

Embodiment approach 2

[0226] Figure 16 It is a cross-sectional view showing a configuration example of the variable resistance nonvolatile memory element 400 according to Embodiment 2 of the present invention.

[0227] figure 1 The shown variable resistance nonvolatile memory element 100 according to Embodiment 1 of the present invention and Figure 16 The nonvolatile memory element 400 differs in that each layer of the variable resistance layer is arranged upside down, and furthermore, the first electrode and the second electrode are arranged upside down. That is, while the second electrode 106 is arranged above the first electrode 103 in the nonvolatile memory element 100 , the second electrode 406 is arranged below the first electrode 403 in the nonvolatile memory element 400 .

[0228] The nonvolatile memory element 400 of this embodiment includes: a substrate 401, an interlayer insulating film 402 formed on the substrate 401, a second electrode 406 formed on the interlayer insulating film ...

Embodiment approach 3

[0242] Figure 18 It is a cross-sectional view showing a configuration example of the variable resistance nonvolatile memory element 500 according to Embodiment 3 of the present invention.

[0243] figure 1 The shown variable resistance nonvolatile memory element 100 according to Embodiment 1 of the present invention and Figure 18 The nonvolatile memory element 500 differs in that the partial region 105 is composed of a first partial region 105a and a second partial region 105b.

[0244] The nonvolatile memory element 500 includes a substrate 101 , an interlayer insulating film 102 , a first electrode 103 , a second electrode 106 , and a variable resistance layer 104 .

[0245] Here, the variable resistance layer 104 includes a first oxide layer 104 a , a second oxide layer 104 b , a third oxide layer 104 c and a partial region 105 . The resistivity ρ of the first oxide layer 104a x , The resistivity ρ of the second oxide layer 104b y , and the resistivity ρ of the thir...

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Abstract

A nonvolatile memory element includes: a first electrode; a second electrode; and a variable resistance layer comprising a metal oxide positioned between the first electrode and the second electrode. The variable resistance layer includes: a first oxide layer having a resistivity ρx, on the first electrode; a second oxide layer having a resistivity ρy (ρx<ρy), on the first oxide layer; a third oxide layer having a resistivity ρz (ρy<ρz), on the second oxide layer; and a localized region that is positioned in the third oxide layer and the second oxide layer to be in contact with the second electrode and not to be in contact with the first oxide layer, and is, in resistivity, lower than the third oxide layer and different from the second oxide layer.

Description

technical field [0001] The present invention relates to a nonvolatile memory element, and more particularly, to a variable resistance nonvolatile memory element whose resistance value changes reversibly according to an applied electrical signal, and a nonvolatile memory device having the nonvolatile memory element. Background technique [0002] In recent years, with the development of digital technology in electronic equipment, in order to store data such as music, images, and information, the demand for large-capacity and non-volatile memory devices has increased. As a method to cope with such a demand, the resistance value is changed according to the supplied electric signal, and a nonvolatile memory element which continuously maintains its state is used for a nonvolatile memory device of a memory cell (hereinafter, referred to as ReRAM )Having attention. This is because the structure of the nonvolatile memory element is relatively simple, and it is easy to increase the d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/105H01L45/00H01L49/00
CPCH01L45/145G11C13/0002G11C13/0007H01L27/2436H01L27/2463H01L45/08H01L45/1233H01L45/146H10B63/20H10B63/30H10B63/80H10N70/24H10N70/826H10N70/8833H10N70/883
Inventor 魏志强二宫健生高木刚
Owner PANASONIC SEMICON SOLUTIONS CO LTD