A high breakdown voltage n-type vertical silicon carbide metal oxide semiconductor transistor

Abstract

An N type longitudinal silicon carbide MOS tube with high breakdown voltage comprises an N type substrate, wherein drain electrode metal and an N type drift region are arranged at two ends of the N type substrate respectively; a P type base region layer is arranged on the N type drift region; N type source regions and P type body contact regions distributed according to an array are arranged on the P type base region layer; N type drift region bulges are arranged between adjacent N type source regions; boundaries of the N type source regions extend into corresponding breakdown voltage improving regions; the breakdown voltage improving regions are rectangular regions formed by inner side boundary extension cords of four adjacent N type source regions; gate oxide layers are arranged on the N type drift region bulges, and boundaries of the gate oxide layers extend outwards and stop at the boundaries of the N type source regions; poly-silicon gates are arranged on the gate oxide layers; field oxide layers arranged on the poly-silicon gates and the N type source regions; the N type source regions and the P type body contact regions are connected with source electrode metal; and the surfaces of the poly-silicon gates are connected with gate metal.

Description

technical field [0001] The invention mainly relates to the field of high-voltage power semiconductor devices, specifically, an N-type vertical silicon carbide metal oxide semiconductor tube with high breakdown voltage, which is suitable for aerospace, aviation, oil exploration, nuclear energy and other fields. Background technique [0002] Silicon carbide material is a wide bandgap semiconductor material with large band gap, high breakdown voltage, high thermal conductivity, high electron saturation drift velocity, high electron mobility, high thermal conductivity, strong radiation resistance and chemical stability Excellent physical and chemical properties, such as good performance and compatibility with silicon integrated circuit technology, have become the preferred materials for manufacturing high-temperature, high-frequency, high-power, radiation-resistant, non-volatile memory devices and optoelectronic integrated devices. At present, developed countries represented by ...

Images