Touch-sensing electrode structure and touch-sensitive device

An electrode structure, touch sensing technology, applied in electrical digital data processing, measurement leads/probes, instruments, etc., can solve the problems of unstable material properties of organic insulating layers, cumbersome manufacturing procedures, short circuits or open circuits, etc. Avoid line drawing induction disconnection, improve visual effects, increase induction capacitance and the effect of

Inactive Publication Date: 2013-12-18
WINTEK CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

In a double-sided ITO process, it is necessary to perform coating and lithographic etching processes on both sides of the glass substrate, so that the X-axis and Y-axis sensing electrodes are formed on both sides of the glass substrate. It is easy to cause the yield rate to drop
In addition, in a single-sided ITO process, the X-axis and Y-axis sensing electrodes are formed on the same side of the glass substrate. Due to the need for cross-bridge structure design in the plane, the X-axis and Y-axis sensing electrodes are prone to instability due to the material properties of the organic insulating layer. or other factors causing short circuit or open circuit problems

Method used

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  • Touch-sensing electrode structure and touch-sensitive device

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Embodiment Construction

[0045] The present invention will be described in detail below in conjunction with the accompanying drawings. The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of the embodiments with reference to the drawings. The directional terms mentioned in the following embodiments, such as: up, down, left, right, front or back, etc., are only directions referring to the attached drawings. Accordingly, the directional terms are used to illustrate and not to limit the invention.

[0046] figure 1 It is a schematic diagram of a touch device according to an embodiment of the present invention. Such as figure 1 As shown, in a touch device 10 , a touch sensing electrode structure 20 is disposed on a substrate 12 , and a decoration layer 14 can be disposed on the edge of the substrate 12 . The substrate 12 can be, for example, a cover lens. The decoration layer 14 can include at lea...

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Abstract

The invention provides a touch-sensing electrode structure and a touch-sensitive device. The touch-sensing electrode structure has a plurality of electrode units. Each of the electrode units includes at least one first electrode and at least one second electrode. The second electrode is formed in an area not overlapping the first electrode, and the first electrode has a first part and a second part. The second electrode is adjacent to the first part of the first electrode and spaced apart the first part of the first electrode by a first interval, the second part of the first electrode is adjacent to the second electrode and spaced apart the second electrode by a second interval, and a width of the second interval is not equal to a width of the first interval. In this way, the area of the mutually inducted action surface between the first electrode and the second electrode is greatly increased, so that the inducted electric capacity of the touch-sensing electrode structure and the sensitivity of the touch-sensing operation are improved.

Description

technical field [0001] The invention relates to a touch sensing electrode structure and a touch device. Background technique [0002] The touch sensing electrode structure of the current capacitive touch device is usually made of double-side ITO (double-side ITO) or single-side ITO (single-side ITO). In a double-sided ITO process, it is necessary to perform coating and lithographic etching processes on both sides of the glass substrate, so that the X-axis and Y-axis sensing electrodes are formed on both sides of the glass substrate. It is easy to cause the yield rate to drop. In addition, in a single-sided ITO process, the X-axis and Y-axis sensing electrodes are formed on the same side of the glass substrate. Due to the need for cross-bridge structure design in the plane, the X-axis and Y-axis sensing electrodes are prone to instability due to the material properties of the organic insulating layer. or other factors causing short circuit or open circuit problems. Therefo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/044G06F3/041
CPCG06F3/0443G01R1/06
Inventor 陈国兴陈昱廷苏振豪苏国彰
Owner WINTEK CORP
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