Phase change memory

A phase-change memory and phase-change storage technology, which is applied in static memory, digital memory information, information storage, etc., can solve the problems of occupied chip volume utilization efficiency, low storage density and storage capacity, etc.

Active Publication Date: 2014-01-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a phase change memory, which is used to solve the utilization efficienc

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Embodiment Construction

[0022] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0023] see Figure 1 to Figure 4 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides a phase change memory, and especially provides the phase change memory with a film having threshold voltage switch (OTS) characteristics as a gating switch. The film having the OTS characteristics as the gating switch of the phase change memory can prevent an unintentional operation of an unselected phase change memory unit, and plays same roles as other gating switches, such as field effect transistors, diodes and the like. Utilization of the film having the OTS characteristics as the gating switch of the phase change memory can effectively reduce preparation process steps of the gating switch, and reduces the size of the gating switch. Therefore, the utilization of the film having the OTS characteristics as the gating switch of the phase change memory has greater superiorities in reducing the cost and improving the memory density.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a phase-change memory, in particular to a phase-change memory device using a thin film with threshold voltage switching characteristics (OTS) as a gate switch. Background technique [0002] Memory is an important part of the current semiconductor market and the cornerstone of information technology, playing an important role in both life and the national economy. With the rapid increase of the amount of information along with social development, the research and development of memory with high data storage density has become an important task for memory researchers. Among them, the phase-change memory unit is considered by the International Semiconductor Industry Association to be the most likely to be replaced due to its advantages such as high-speed reading, high erasable times, non-volatility, small component size, low power consumption, strong vibration resistance and rad...

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Application Information

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IPC IPC(8): G11C13/00G11C11/56
Inventor 任堃饶峰宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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