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Electrostatic Discharge Protection Device

A technology for electrostatic discharge protection and output devices, applied in circuits, electrical components, electric solid devices, etc., can solve the problems of limiting the size shrinkage of STI diodes and ESD protection devices that are not suitable for high-speed circuits

Active Publication Date: 2017-03-01
MEDIATEK INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, STI's design rules limit the size shrinkage of STI diodes
Moreover, traditional ESD protection devices are not suitable for high-speed circuits (such as radio frequency interfaces), because traditional STI diodes and gating diodes shunt most of the RF signal to the power supply (VDD / VSS) line

Method used

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Embodiment Construction

[0018] Described below are embodiments for carrying out the present invention. The following description is intended to illustrate the general principles of the invention and should not be viewed in a limiting sense. The scope of the invention is determined by reference to the appended claims. In the description of the specification, the same reference numerals are used in the drawings and the specification to designate the same or similar components.

[0019] The present invention will be described below with reference to specific embodiments and with reference to the accompanying drawings, but the present invention is not limited thereto. The drawings described are only schematic and do not limit the invention. It should be noted that in the drawings, the size of some elements may be exaggerated and not drawn to scale. These dimensions and relative dimensions may not correspond to actual dimensions in which the invention is practiced.

[0020] figure 1 is a circuit diag...

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Abstract

The invention provides an electrostatic discharge (ESD) protection device. The ESD protection device includes a semiconductor substrate having an active region. A first well region having a first conductive type is formed in the active region. A first doped region having the first conductive type is formed in the first well region. A first metal contact is disposed on the first doped region. A second metal contact is disposed on the active region, connecting to the first well region. The first metal contact and a second metal contact are separated by a poly pattern or an insulating layer pattern disposed on the first well region. The ESD protection device can be used in high speed circuits.

Description

technical field [0001] The present invention relates to an electrostatic discharge (ESD) protection device, in particular to an electrostatic discharge protection device formed by a Schottky diode for input / output (I / O) devices. Background technique [0002] Electrostatic discharge (ESD) protection devices for input / output (I / O) devices are excellent ESD protection with low capacitive loading. Conventional ESD protection devices for input / output (I / O) devices include shallow trench isolation (STI) diodes or gated diodes. However, STI's design rules limit the size shrinkage of STI diodes. Moreover, traditional ESD protection devices are not suitable for high-speed circuits (such as radio frequency interfaces), because traditional STI diodes and gating diodes shunt most of the RF signal to the power supply (VDD / VSS) line. [0003] Therefore, there is a need for a new ESD protection device structure for input / output (I / O) devices. Contents of the invention [0004] The i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/60
Inventor 曾峥柯庆忠黄柏狮
Owner MEDIATEK INC