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A Subunit Topology of DC Fault Isolation Flexible HVDC Converter Station

A flexible DC transmission and fault isolation technology, applied in the direction of DC power input conversion to DC power output, electrical components, output power conversion devices, etc., can solve problems such as complex control, increased cost of converter stations, and large losses

Active Publication Date: 2017-03-08
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the control is more complicated, and the subunit capacitor voltage balance is more difficult
Although the full bridge sub-module (FBSM) also has DC blocking capability, the loss is large during normal operation, and the cost of the converter station is significantly increased

Method used

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  • A Subunit Topology of DC Fault Isolation Flexible HVDC Converter Station
  • A Subunit Topology of DC Fault Isolation Flexible HVDC Converter Station
  • A Subunit Topology of DC Fault Isolation Flexible HVDC Converter Station

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] figure 2 Shown is a specific example 1 of the present invention. Such as figure 2 As shown, the subunit of the DC fault isolation type flexible DC transmission converter station in Embodiment 1 of the present invention includes: a first capacitor group C1, a second capacitor group C2, four fully-controlled semiconductor devices T1, T2, T3, T4, and a fault isolation combined circuit 7 . The connection method is as follows:

[0050] The anode 1 of the first capacitor group C1 is connected to the collector of the first fully-controlled semiconductor device T1; the emitter of the first fully-controlled semiconductor device T1 is connected to the collector of the second fully-controlled semiconductor device T2, as the first Full-controlled device connection point 5; the emitter of the second fully-controlled semiconductor device T2 is connected to the negative pole 2 of the first capacitor group C1; the positive pole 3 of the second capacitor group C2 is connected to th...

Embodiment 2

[0054] image 3 Shown is Embodiment 2 of the present invention. Such as image 3 As shown, the subunit of the DC fault isolation type flexible DC transmission converter station in Embodiment 2 of the present invention includes: a first capacitor group C1, a second capacitor group C2, four fully-controlled semiconductor devices T1, T2, T3, T4, and a fault isolation combined circuit 7 . The connection method is as follows:

[0055] The anode 1 of the first capacitor group C1 is connected to the collector of the first fully-controlled semiconductor device T1; the emitter of the first fully-controlled semiconductor device T1 is connected to the collector of the second fully-controlled semiconductor device T2, as the first Full-controlled device connection point 5; the emitter of the second fully-controlled semiconductor device T2 is connected to the negative pole 2 of the first capacitor group C1; the positive pole 3 of the second capacitor group C2 is connected to the collecto...

Embodiment 3

[0059] Figure 4 Shown is Embodiment 3 of the present invention. Such as Figure 4 As shown, the subunit of the DC fault isolation type flexible DC transmission converter station in Embodiment 3 of the present invention includes: a first capacitor group C1, a second capacitor group C2, four fully-controlled semiconductor devices T1, T2, T3, T4, and a fault isolation combined circuit 7 . The connection method is as follows:

[0060] The anode 1 of the first capacitor group C1 is connected to the collector of the first fully-controlled semiconductor device T1; the emitter of the first fully-controlled semiconductor device T1 is connected to the collector of the second fully-controlled semiconductor device T2, as the first Full-controlled device connection point 5; the emitter of the second fully-controlled semiconductor device T2 is connected to the negative pole 2 of the first capacitor group C1; the positive pole 3 of the second capacitor group C2 is connected to the collec...

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PUM

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Abstract

The invention discloses a direct current fault isolation type flexible direct current transmission converter station subelement topology, comprising a first capacitor set C1, a second capacitor set C2, four full-controlled semiconductor devices T1, T2, T3 and T4 and a fault isolation combined circuit (7). The first full-controlled semiconductor device (T1) and the second full-controlled semiconductor device (T2) are connected with the first capacitor set (C1) to form a half-bridge subelement, and the third full-controlled semiconductor device (T3) and the fourth full-controlled semiconductor device (T4) are connected with the second capacitor set (C1) to form a half-bridge subelement. Six leading-out terminals (11, 12, 13, 14, 15, 16) of the fault isolation combined circuit (7) are respectively connected with the anode (1) and cathode (2) of the first capacitor set (C1), the anode (3) and cathode (4) of the second capacitor set (C2), the joint point (5) of T1 and T2 and the joint point (6) of T3 and T4.

Description

technical field [0001] The invention relates to a sub-unit of a direct current fault isolation type flexible direct current transmission converter station. Background technique [0002] Due to the unique advantages of DC transmission based on voltage source conversion, it has broad application prospects in the fields of clean new energy grid connection, urban power transmission and distribution capacity expansion, and offshore isolated load power transmission. Based on the modular multilevel converter (MMC), due to the cascaded form of half-bridge sub-modules, it has low requirements for consistent triggering of devices and dynamic voltage equalization, good scalability, high-quality output voltage waveform, and low switching frequency. Low power consumption, low operating loss and many other advantages have become the mainstream trend of current converter selection. However, this structure has the inherent defect that it cannot effectively deal with DC faults. When a faul...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02H7/10H02M3/137
Inventor 朱晋韦统振霍群海韩立博张桐硕吴理心
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI