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A Modular Multilevel Converter Subunit Topology

A modular multi-level converter technology, applied in electrical components, AC power input conversion to DC power output, irreversible DC power input conversion to AC power output, etc., can solve the cost increase of converter stations, Problems such as complex control and difficult voltage balance of subunit capacitors

Active Publication Date: 2016-06-22
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the control is more complicated, and the subunit capacitor voltage balance is more difficult
Although the full bridge sub-module (FBSM) also has DC blocking capability, the loss is large during normal operation, and the cost of the converter station is significantly increased

Method used

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  • A Modular Multilevel Converter Subunit Topology
  • A Modular Multilevel Converter Subunit Topology
  • A Modular Multilevel Converter Subunit Topology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] figure 2 Shown is a specific example 1 of the present invention. Such as figure 2 As shown, the modular multilevel converter subunit of Embodiment 1 of the present invention includes: a first capacitor group C1, a second capacitor group C2, five fully-controlled semiconductor devices T1, T2, T3, T4, T5, and diode combination circuit 1. The connection method is as follows:

[0049] The anode 2 of the first capacitor group C1 is connected to the collector of the first fully-controlled semiconductor device T1. The emitter of the first fully-controlled semiconductor device T1 is connected to the collector of the second fully-controlled semiconductor device T2 as the first lead-out terminal 4 of the subunit topology of the modular multilevel converter. The emitter of the second fully-controlled semiconductor device T2 is connected to the emitter of the fifth fully-controlled semiconductor device T5, and then connected to the negative electrode 5 of the first capacitor ...

Embodiment 2

[0053] image 3 Shown is Embodiment 2 of the present invention. Such as image 3 As shown, the subunit topology of the modular multilevel converter in Embodiment 2 includes: a first capacitor group C1, a second capacitor group C2, five fully-controlled semiconductor devices T1, T2, T3, T4, T5, and Diode Combination Circuit 1. Its connection method is as follows:

[0054] The anode 2 of the first capacitor group C1 is connected to the collector of the first fully-controlled semiconductor device T1. The emitter of the first fully-controlled semiconductor device T1 is connected to the collector of the second fully-controlled semiconductor device T2 as the first lead-out terminal 4 of the subunit topology of the modular multilevel converter. The emitter of the second fully-controlled semiconductor device T2 is connected to the emitter of the fifth fully-controlled semiconductor device T5, and then connected to the negative electrode 5 of the first capacitor group C1. The coll...

Embodiment 3

[0057] Figure 4 Shown is Embodiment 3 of the present invention. Such as Figure 4 As shown, the modular multilevel converter sub-unit of this embodiment 3 includes: a first capacitor group C1, a second capacitor group C2, three fully-controlled semiconductor devices T1, T2, T4, a bidirectional turn-off semiconductor Combination 20 and Diode Combination Circuit 1. Its connection method is as follows:

[0058] The anode 2 of the first capacitor group C1 is connected to the collector of the first fully-controlled semiconductor device T1. The emitter of the first fully-controlled semiconductor device T1 is connected to the collector of the second fully-controlled semiconductor device T2 as the first lead-out terminal 4 of the subunit topology of the modular multilevel converter. The emitter of the second fully-controlled semiconductor device T2 is connected to the negative pole 5 of the first capacitor group C1 , then connected to the positive pole 6 of the second capacitor g...

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Abstract

A modularization multi-level current converter subunit topology part comprises a first capacitor group C1, a second capacitor group C2, five whole-control-type semiconductor devices T0, T1, T2, T3 and T4 and a diode combinational circuit (1). The first whole-control-type semiconductor device (T1) and the second whole-control-type semiconductor device (T2) are connected with the first capacitor group (C1) to be in a half-bridge subunit form. The third whole-control-type semiconductor device (T3) and the fourth whole-control-type semiconductor device (T4) are connected with the second capacitor group (C2) to be in a half-bridge subunit form. An emitting electrode of the fifth whole-control-type semiconductor device (T5) is connected with a negative electrode (5) of the first capacitor group (C1), and a collector is connected with a positive electrode (6) of the second capacitor group (C2). Six guided-out terminals (12, 14, 15, 16, 17 and 13) are connected with a negative electrode (2) and a negative electrode (15) of the first capacitor group (C1), the positive electrode (6) and a negative electrode (3) of the second capacitor group (C2) and a first guided-out terminal (4) and a second guided-out terminal (5) of the subunit topology part respectively.

Description

technical field [0001] The invention relates to a modular multilevel converter subunit topology. Background technique [0002] Due to its unique advantages, DC transmission based on voltage source conversion has broad application prospects in the fields of clean new energy grid connection, urban power transmission and distribution capacity expansion, and offshore isolated load transmission. Based on the modular multilevel converter (MMC), due to the cascaded form of half-bridge sub-modules, it has low requirements for consistent triggering of devices and dynamic voltage equalization, good scalability, high-quality output voltage waveform, and low switching frequency. Many advantages such as low operating loss have become the mainstream trend of current converter selection. However, this structure has the inherent defect that it cannot effectively deal with DC faults. When a fault occurs on the DC side, the anti-parallel freewheeling diodes of the fully-controlled switching...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M7/48H02M7/483H02M1/32
Inventor 朱晋韦统振霍群海吴理心韩立博张桐硕
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI