Semiconductor light emitting device and manufacturing method thereof

Abstract

The disclosed invention relates to a semiconductor light-emitting element comprising: a plurality of semiconductor layers which are provided with a growth substrate eliminating surface on the side where a first semiconductor layer is located; a support substrate which is provided with a first electrical pathway and a second electrical pathway; a joining layer which joins a first surface side of the support substrate with a second semiconductor layer side of the plurality of semiconductor layers, and is electrically linked with the first electrical pathway; a joining layer eliminating surface which is formed on the first surface, and in which the second electrical pathway is exposed, and which is open towards the plurality of semiconductor layers; and an electrical link for electrically linking the plurality of semiconductor layers with the second electrical pathway exposed in the joining layer eliminating surface.

Description

technical field [0001] The present disclosure generally relates to semiconductor light emitting devices or elements and methods of manufacturing the same. More particularly, the present disclosure relates to semiconductor light emitting devices having electrical transfer channels on a support substrate and methods of manufacturing the same. [0002] In this context, the term "semiconductor light emitting device" is intended to mean a semiconductor light emitting device that generates light via electron-hole recombination, and a typical example thereof is a Group III nitride semiconductor light emitting device. The Group III nitride semiconductor is composed of Al(x)Ca(y)In(l-x-y)N (0=x=1, 0=y=1, 0=x+y=1). Another example thereof is a GaAs-based semiconductor light emitting device for emitting red light. Background technique [0003] This section provides background information related to the present disclosure which is not necessarily prior art. [0004] 1 is a diagram il...

AI Technical Summary

Problems solved by technology

However, no semiconductor light emitting device and its manufacturing method have been proposed that can substantially overcome the difficulty in aligning the electrode films 901, 902, and 903, the electrode 800, and the electrode patterns 1010 and 1020, and after wafer-level bonding operations, after removing the substrate 100 Cracks occurring in the semiconductor layers 200, 300 and 400 during and subsequent processing

Images