Image sensor pixel cell with dual self-aligned implant next to storage gate
A technology of pixel unit and storage gate, which is applied in the direction of electrical components, semiconductor devices, electric solid devices, etc., and can solve problems such as image distortion and perceivable elongation distortion
Active Publication Date: 2017-10-03
OMNIVISION TECH INC
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Problems solved by technology
For slowly moving objects, the time difference between each line produces image distortion
For fast-moving objects, the rolling shutter causes perceivable elongation distortion along the object's axis of motion
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[0012] As will be shown, the present disclosure discloses methods and apparatus directed to image sensor pixel cells with dual self-aligned implants in the spacer region next to the storage gate. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. One skilled in the relevant art will recognize, however, that the techniques described herein may be practiced without one or more of the specific details or with other methods, components, materials, etc. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.
[0013] Reference throughout this specification to "one embodiment," "an embodiment," "an example," or "an example" means that a particular feature, structure, or charact...
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The present invention relates to an image sensor pixel cell with dual self-aligned implants next to a storage gate. A pixel cell includes a storage transistor including a deeply implanted storage region having a first polarity implanted in a semiconductor substrate to store image charge accumulated by a photodiode. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to the output of the storage transistor to selectively transfer the image charge from the storage transistor to a readout node. A first shallow implant region having the first polarity is implanted in the semiconductor substrate under a first spacer region between the transfer gate of the transfer transistor and the storage gate of the storage transistor . A second shallow implant region having the first polarity is implanted in the semiconductor substrate below a second spacer region between the storage gate and the output gate.
Description
technical field [0001] The present invention generally relates to semiconductor processing. More specifically, examples of the invention relate to semiconductor processing of image sensor pixel cells with global shutters. Background technique [0002] For high-speed image sensors, a global shutter can be used to capture fast-moving objects. A global shutter typically enables all pixel elements in an image sensor to simultaneously capture an image. For slower moving objects, use a more general rolling shutter. A rolling shutter typically captures the images sequentially. For example, each row within a two-dimensional ("2D") array of pixel cells may be sequentially enabled such that each pixel cell within a single row simultaneously captures an image, but each row is enabled in a rolling order. As such, each row of pixel units captures images during different image acquisition windows. For slowly moving objects, the time difference between each row produces image distorti...
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IPC IPC(8): H01L27/146
CPCH01L27/14614H01L27/14656
Inventor 胡信中杨大江傅振宏
Owner OMNIVISION TECH INC