Circuit for realizing multi-layer identification based on memory resistor and control method of circuit
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- HUAZHONG UNIV OF SCI & TECH
- Publication Date
- 2015-04-22
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Abstract
Description
technical field
[0001] The invention belongs to the field of microelectronics and biological cognition simulation, and more specifically relates to a circuit and a control method for realizing multi-layer recognition based on a memristor. Background technique
[0002] A memristor is a device that represents both ends of the relationship between charge and magnetic flux. Its resistance value changes with the passing current, that is, the change of the resistance of the memristor is related to the magnitude and direction of the current. Therefore, the change of the resistance value of the memristor can be controlled by controlling the pulse signal acting on both ends of the memristor. This control method includes pulse amplitude, pulse width, duty cycle and so on.
[0003] In the traditional field of cognition, organisms' recognition of external things is divided into many levels. The organism matches the signals obtained from external things with its own memory, and awaken...