Circuit for realizing multi-layer identification based on memory resistor and control method of circuit

A control method and memristor technology, which are applied in the fields of microelectronics and biocognitive simulation, and can solve the problems of large circuit scale and complex implementation.
CN104539280AActive Publication Date: 2015-04-22HUAZHONG UNIV OF SCI & TECH

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
HUAZHONG UNIV OF SCI & TECH
Publication Date
2015-04-22

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Abstract

The invention discloses a circuit for realizing multi-layer identification based on a memory resistor and a control method of the circuit, and aims to simulate the multi-state (cognition, familiarity and strangeness) cognitive ability of a biological brain. Multi-layer pulse identification is realized by regulating the matching quantity of signal pulses at a second input end and a first input end and the pulse amplitude of signal pulses at the second input end respectively. An input signal at the first input end represents a sample signal stored in the biological brain, and an input signal at the second input end represents a stimulation signal from an external environment received by the biological brain. According to the principle of an identification method, the identification state of the brain specific to external stimulation is regulated through controlling of the mutual matching of the sample signal stored in the brain and the stimulation signal from the external environment, so that a multi-layer identification technology is realized.
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Description

technical field

[0001] The invention belongs to the field of microelectronics and biological cognition simulation, and more specifically relates to a circuit and a control method for realizing multi-layer recognition based on a memristor. Background technique

[0002] A memristor is a device that represents both ends of the relationship between charge and magnetic flux. Its resistance value changes with the passing current, that is, the change of the resistance of the memristor is related to the magnitude and direction of the current. Therefore, the change of the resistance value of the memristor can be controlled by controlling the pulse signal acting on both ends of the memristor. This control method includes pulse amplitude, pulse width, duty cycle and so on.

[0003] In the traditional field of cognition, organisms' recognition of external things is divided into many levels. The organism matches the signals obtained from external things with its own memory, and awaken...

Claims

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