A kind of organic light-emitting display device and preparation method thereof

A light-emitting display and organic technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as complex structure and preparation process, and achieve the effect of stable properties and simplified structure

Active Publication Date: 2018-08-07
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Therefore, what the present invention aims to solve is the problem that the organic light-emitting display device designed in the prior art is complicated in structure and manufacturing process in order to protect the metal oxide semiconductor layer, and provides an organic light-emitting display device with simple structure and manufacturing process

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  • A kind of organic light-emitting display device and preparation method thereof
  • A kind of organic light-emitting display device and preparation method thereof
  • A kind of organic light-emitting display device and preparation method thereof

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Embodiment Construction

[0040] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe in detail the embodiments of the present invention in conjunction with the accompanying drawings.

[0041] This invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art, and the present invention will only be defined by the appended claims. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. It will be understood that when an element such as a layer, region or substrate is referred to as being "formed on" or "disposed on" another element, it can be directly on the other element or present middle element. In contrast, when an element is referred to as bei...

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Abstract

An organic light emitting display device according to the present invention includes a substrate, a thin film transistor and an organic light emitting diode arranged on the substrate, and a first amorphous silicon layer is directly arranged on the metal oxide semiconductor layer in the thin film transistor. Not only can avoid the source / drain electrode layer patterning to cause damage to the metal oxide semiconductor layer, but also can effectively block ultraviolet rays incident on the metal oxide semiconductor, effectively simplifying the structure of the organic light emitting display device. At the same time, the preparation method of an organic light-emitting display device according to the present invention only needs to arrange a layer of amorphous silicon layer on the metal oxide semiconductor layer to achieve the purpose of etching barrier layer and UV blocking, effectively The preparation process is simplified, and the product yield and economic benefits are improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an organic light-emitting display device and a preparation method thereof. Background technique [0002] In recent years, with the continuous increase of the display panel size, the frequency of the driving circuit has been continuously increased, and the mobility of the existing amorphous silicon thin film transistor (a-Si TFT) is generally within 0.5cm 2 / V·s, it is difficult to meet the use requirements of large-size, high-drive display frequency display panels in the prior art. In the prior art, there are two types of high-mobility thin-film transistors: polysilicon thin-film transistor (LTPS TFT) and metal oxide thin-film transistor (taking indium gallium zinc oxide semiconductor thin-film transistor as an example), and their performance comparisons are shown in Table 1. . Although the research on polysilicon thin film transistors is relatively early, the uniformity of polysi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/32H01L21/77
Inventor 卜维亮
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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