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Plasma Assisted Physical Vapor Deposition Source

A physical vapor deposition, plasma technology, applied in the field of plasma, can solve problems such as difficulty in application, increase in substrate temperature, and inability to form thin films

Active Publication Date: 2017-07-07
KOREA INST OF FUSION ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the temperature of the deposition source is increased to prevent a decrease in the evaporation rate, the radiant heat of the deposition source will cause the temperature of the substrate to rise, so it is difficult to apply to products requiring a low-temperature process
[0005] Moreover, if no additional heating device is provided on the substrate, the deposited particles only have energy equivalent to the temperature of the deposition source. In this case, the deposited particles do not have enough energy, so high-quality thin films cannot be formed.

Method used

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  • Plasma Assisted Physical Vapor Deposition Source
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  • Plasma Assisted Physical Vapor Deposition Source

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Embodiment Construction

[0021] To facilitate understanding of the embodiments of the present invention, more than one embodiment is briefly described below. This section is not a conclusive overview of all possible embodiments, nor is it intended to identify core components of all components or to cover the scope of all embodiments. Its sole purpose is to present one or more embodiments in a simplified form through the detailed description disclosed below.

[0022] figure 1 In order to summarize the composition diagram of the existing physical vapor deposition chamber. The target 10 has a shape of a disk (Disk) or a plate (Plate), and atoms on the surface thereof are ejected by collision with the process gas (argon gas) supplied from the process gas supply unit 40 .

[0023] The lower part of the metal target 10 has a silicon wafer (wafer) W provided on the upper part of the heater 30 , and atoms emitted from the metal target 10 are deposited on the silicon wafer W. As shown in FIG. The upper part...

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Abstract

The invention relates to a plasma-assisted physical vapor deposition source, in particular to a technology combining plasma with a thermal physical vapor deposition source (Thermal Physical Vapor Deposition) which forms a thin film in high vacuum.

Description

technical field [0001] The present invention relates to a physical vapor deposition source using plasma, and in particular to a technology combining plasma with a thermal physical vapor deposition source (Thermal Physical Vapor Deposition) that forms a thin film in high vacuum. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition; PVD) method, as one of the vapor deposition methods, can usually be classified into evaporation (Evaporation), sputtering (Sputtering), ion plating (Ionplating), etc. according to the working principle. It is a widely used method. Deposition methods used in decoration, ultra-light and other industries and even in the field of electronics. [0003] Thermal Vapor Deposition (PVD) technology is generally carried out under high vacuum, and since it is carried out in a high vacuum state, plasma cannot be used at the same time, and the reason is as follows. [0004] The general thermal physical vapor deposition source is us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/24
CPCC23C14/243C23C14/32C23C14/24
Inventor 崔镕燮郑熔镐卢泰协石东簒朴贤宰
Owner KOREA INST OF FUSION ENERGY