Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low Power Bidirectional Noise Canceling LNA

A low-noise amplifier and low-power technology, which is applied in differential amplifiers, DC-coupled DC amplifiers, and improved amplifiers to reduce noise effects, etc. Advanced problems, achieve good input matching performance, reduce input impedance, and eliminate channel thermal noise

Active Publication Date: 2018-06-26
10TH RES INST OF CETC
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

2. It is difficult for wideband low noise amplifiers to meet low noise requirements
However, for the traditional common-gate-cascode noise reduction structure LNA, it is difficult to directly reduce the current of the common-gate tube, because the common-gate tube needs to provide 50 ohm input impedance matching; at the same time, the transconductance of the common-source tube The value also needs to be set to a higher value to achieve the effect of suppressing its noise, but this will cause the common source tube to consume too much current and consume too much power

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low Power Bidirectional Noise Canceling LNA
  • Low Power Bidirectional Noise Canceling LNA
  • Low Power Bidirectional Noise Canceling LNA

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] refer to figure 1 , figure 2 . In a preferred embodiment described in the following embodiments, the low-power bidirectional noise-reducing low-noise amplifier includes: an impedance down-conversion network, a common-gate amplifying circuit and a common-source amplifying circuit with a feedback resistor; a common-gate amplifying circuit Together with a common-source amplifier circuit with feedback resistors, it forms a low-noise amplifier circuit with single-end input and double-end output; wherein, the MOS transistors are all N-type metal oxide semiconductor field effect transistors. Both the common gate input amplifier circuit and the common source amplifier circuit with feedback resistors adopt the cascode structure. The common gate input amplifier circuit is composed of MOS transistor M1 connected in series with MOS transistor M3 and its load resistor R1 connected in series between the drain of MOS transistor M3 and the power supply VDD; the common source input a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a low-power-consumption bidirectional noise-reducing low-noise amplifier and aims to provide the low-power-consumption bidirectional noise-reducing low-noise amplifier which has advantages of low noise coefficient, high reliability and stable gain, wherein the low-power-consumption bidirectional noise-reducing low-noise amplifier can eliminate a common-gate-tube channel thermal noise and reduce a common-source-tube channel thermal noise and a common-source-end load resistor thermal noise. The low-power-consumption bidirectional noise-reducing low-noise amplifier is realized through a technical solution which is characterized in that an impedance down-conversion network is parallelly connected with a common-source-electrode amplifying circuit with a feedback resistor through a common-gate-electrode amplifying circuit, thereby forming a single-end-input double-end-output low-noise amplifying circuit, wherein a common-gate-electrode input amplifying circuit is composed of an MOS tube M1, a serially connected MOS tube M3, and a load resistor R1 which is serially connected between the drain electrode of the MOS tube M3 and a power supply VDD. A common-source-electrode input amplifier circuit is composed of a capacitor C3 which is connected with the source electrode of an MOS tube M2, an MOS tube M4 which is serially connected with the MOS tube M2, a feedback resistor R3 which is parallelly connected between the gate electrode of the MOS tube M2 and the drain electrode of the MOS tube M4, and a load resistor R2 which is serially connected between the drain electrode of the MOS tube M4 and the power supply VDD.

Description

technical field [0001] The invention relates to a radio frequency integrated low noise amplifier in a radio frequency receiver in the field of wireless communication, in particular to a low noise amplifier using bidirectional noise reduction technology. Background technique [0002] The low noise amplifier is an important part of the receiver in the wireless communication system. Its parameters such as noise and gain directly affect the performance indicators such as the noise figure and sensitivity of the receiver. In the receiving system, it is always at the front end. It mainly amplifies the weak signal received by the whole system and reduces the interference of noise, which restricts the performance of the whole receiving system. The low-noise amplifier plays a decisive role in the noise characteristics of the whole system, which requires its noise figure to be as small as possible. In order to suppress the impact of noise on the system at various levels behind, it is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/26H03F3/45
Inventor 张然
Owner 10TH RES INST OF CETC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products