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Wideband Single-Ended-to-Differential Low Noise Amplifier

A low-noise amplifier, single-ended to differential technology, applied in the direction of low-noise amplifiers, differential amplifiers, amplifiers, etc., can solve the problems of gain-phase mismatch dependence, increase the complexity of inter-stage matching, and large phase errors, etc., to achieve easy on-chip System integration, chip area saving, and low power consumption

Inactive Publication Date: 2020-05-05
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of the structure of the feedback differential pair is that the mismatch of the gain phase depends on the frequency due to the existence of the R / L / C compensation loop, and the power consumption is high [8]
CS-CG pair, which has low power consumption and good isolation, but has a large phase error [9]
[0004] Existing broadband low noise amplifiers are difficult to achieve good input matching and low noise at the same time, and most of them are limited to single-ended input and single-ended output and can only work in cascade with the balun structure, which will increase the complexity of inter-stage matching , introduce additional noise, and the chip area is larger

Method used

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  • Wideband Single-Ended-to-Differential Low Noise Amplifier

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Embodiment Construction

[0051] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0052] Such as figure 1 As shown, the input matching stage circuit includes: a first transistor (M1), a second transistor (M2), a third transistor (M3), a fourth transistor (M4), and a fifth transistor (M5);

[0053] Wherein, the gate of the first transistor (M1) is respectively connected with the gate of the second transistor (M2), the second terminal of the first capacitor (C1), the first terminal of the first resistor (R1) and the sixth capacitor The first end of (C6) is connected;

[0054] The drain of the first transistor (M1) is respectively connected to the drain of the second transistor (M2), the second end of the first resistor (R1), the first end of the third capacitor (C3) and the fourth capacitor ( The first end of C4) is connected;

[005...

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PUM

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Abstract

The invention relates to a 0.1-1.2GHz broadband single-ended-to-differential low noise amplifier. The low noise amplifier comprises an input matching level circuit and a noise cancellation level circuit. According to the input matching level circuit, an input end receives signals (IN) of a signal input end, two ways of signals with opposite phases are generated, and the two ways of signals are output to the post-level noise cancellation level circuit through a high-pass filter. According to the noise cancellation level circuit, the noise cancellation level circuit is equipped with three input ends and two output ends, two ways of input are connected with two ways of output of the input matching level, and the other way of input receives the signals (IN) of the signal input end, and two ways of differential signals (OUT+ / OUT-) are output.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuits, and in particular relates to a 0.1-1.2 GHz broadband single-end-to-differential low-noise amplifier. Background technique [0002] With the development of wireless communication, the role of radio frequency receiving technology in military and civilian fields is becoming more and more important. Broadband communication system is the development trend of today's wireless communication technology, and it is also a hot spot of research at home and abroad [1][2] . There are several approaches to wideband LNA design. The common gate amplifier uses the transconductance of the input tube to achieve broadband matching. The noise figure has little relationship with the operating frequency and bandwidth and is relatively flat. The circuit has excellent reverse isolation performance and high linearity, but the noise figure is high. [3] . The global negative feedback structure...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/26H03F3/45
CPCH03F1/26H03F3/45183H03F2200/294H03F2200/372
Inventor 张为赵启越
Owner TIANJIN UNIV
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