Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor apparatus

A semiconductor, main electrode technology, used in electrical components, pulse technology, electronic switches, etc.

Active Publication Date: 2016-01-27
TOYOTA JIDOSHA KK
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the conventional technique described above has a limit in accelerating the turn-off operation because it discharges the charge accumulated in the gate electrode to the ground when the switching element is turned off.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor apparatus
  • Semiconductor apparatus
  • Semiconductor apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0019] figure 1 It is a diagram illustrating a configuration example of the drive device 1 as an example of a semiconductor device. The driving device 1 is a semiconductor circuit including a circuit for driving an inductive load (for example, an inductor or a motor) connected to the first conductive member 61 or the second conductive member 62 by driving the switching element S1 to be turned on and off. unit.

[0020] The conductive part 61 is a current path that is conductively connected to a high-potential part such as the positive pole of a power supply, or may be indirectly connected to a high-potential part via another switching element or a load. The conductive part 62 is a current path that is conductively connected to a low potential part such as a negative pole of a power supply (for example, a ground potential part), or may be indirectly connected to the lo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor apparatus includes a switching element configured to include a gate electrode, a first main electrode, a second main electrode, a sense electrode to output a sense current smaller than a principal current depending on the principal current flowing in the first main electrode, and to turn off when a control voltage being applied between the gate electrode and the first main electrode is reduceda sense diode configured to include an anode connected with the sense electrode, and a cathode connected with the second main electrodeand a connection circuit configured to connect the gate electrode with the sense electrode when the switching element turns off.

Description

technical field [0001] The present disclosure generally relates to a semiconductor device. Background technique [0002] Conventionally, there has been known a technique for improving the responsiveness of an off operation of a switching element such as an IGBT by increasing a discharge current of a gate electrode when the switching element is turned off (for example, see Patent Document 1). [0003] 【Related technical literature】 [0004] 【Patent Literature】 [0005] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-45590 [0006] However, the conventional technique described above has a limit in speeding up the turn-off operation because it discharges the charge accumulated in the gate electrode to the ground when the switching element is turned off. [0007] Accordingly, an object of at least one embodiment of the present invention is to provide a semiconductor device capable of speeding up a turn-off operation of a switching element. Contents of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/04
CPCH03K17/042H03K17/567
Inventor 长内洋介
Owner TOYOTA JIDOSHA KK