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Semiconductor device

A technology of semiconductors and main electrodes, applied in the direction of electrical components, pulse technology, electronic switches, etc.

Active Publication Date: 2018-05-29
TOYOTA JIDOSHA KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the conventional technique described above has a limit in accelerating the turn-off operation because it discharges the charge accumulated in the gate electrode to the ground when the switching element is turned off.

Method used

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  • Semiconductor device
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Embodiment Construction

[0018] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0019] figure 1 It is a diagram illustrating a configuration example of the drive device 1 as an example of a semiconductor device. The driving device 1 is a semiconductor circuit including a circuit for driving an inductive load (for example, an inductor or a motor) connected to the first conductive member 61 or the second conductive member 62 by driving the switching element S1 to be turned on and off. unit.

[0020] The conductive part 61 is a current path that is conductively connected to a high-potential part such as the positive pole of a power supply, or may be indirectly connected to a high-potential part via another switching element or a load. The conductive part 62 is a current path that is conductively connected to a low potential part such as a negative pole of a power supply (for example, a ground potential part), or may be indirectly connected to the lo...

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Abstract

A semiconductor apparatus includes a switching element configured to include a gate electrode, a first main electrode, a second main electrode, a sense electrode to output a sense current smaller than a principal current depending on the principal current flowing in the first main electrode, and to turn off when a control voltage being applied between the gate electrode and the first main electrode is reduced; a sense diode configured to include an anode connected with the sense electrode, and a cathode connected with the second main electrode; and a connection circuit configured to connect the gate electrode with the sense electrode when the switching element turns off.

Description

technical field [0001] The present disclosure generally relates to a semiconductor device. Background technique [0002] Conventionally, there has been known a technique for improving the responsiveness of an off operation of a switching element such as an IGBT by increasing a discharge current of a gate electrode when the switching element is turned off (for example, see Patent Document 1). [0003] 【Related technical literature】 [0004] 【Patent Literature】 [0005] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-45590 [0006] However, the conventional technique described above has a limit in speeding up the turn-off operation because it discharges the charge accumulated in the gate electrode to the ground when the switching element is turned off. [0007] Accordingly, an object of at least one embodiment of the present invention is to provide a semiconductor device capable of speeding up a turn-off operation of a switching element. Contents of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K17/04
CPCH03K17/042H03K17/567
Inventor 长内洋介
Owner TOYOTA JIDOSHA KK