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A photodetector for broadband detection

A photodetector and wide-band technology, which is applied in the field of optoelectronics, can solve the problems of no photodetector and achieve the effects of improving interface characteristics, ensuring sensitivity, and reducing dislocations

Active Publication Date: 2017-09-26
CHINA JILIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no one photodetector suitable for detection in all wavelength bands

Method used

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  • A photodetector for broadband detection
  • A photodetector for broadband detection
  • A photodetector for broadband detection

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Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0020] figure 1 It is a schematic diagram of the overall structure of the present invention, including a GaAlAs / GaAs photocathode 1, an anode 2 for collecting electrons, a glass window 3, a casing 4, a packaging base 5, an electrode 6 and pins 7, 8. There is an opening at the top of the casing 4, and the package base 5 and the casing 4 are packaged and evacuated to form a sealed cavity. The structure of the GaAlAs / GaAs photocathode 1 and the anode 2 for collecting electrons adopts a semi-cylindrical cathode type, and the electron collecting Above the anode 2 is a transparent SiO 2 A glass window 3 made of glass, the glass window 3 is sealed with the casing 4 at the opening of the casing 4, the electrode 6 is connected to the anode 2 for collecting electrons, and the pins 7 and 8 are connected to the GaAlAs / GaAs photocathode 1. The e...

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Abstract

The invention discloses a photodetector for broadband detection and a preparation method thereof. The photodetector has a semi-cylindrical structure and mainly includes a GaAlAs / GaAs photocathode 1, an anode 2 for collecting electrons, a glass window 3, a casing 4, and a package Base 5, electrode 6 and pins 7, 8; GaAlAs / GaAs photocathode 1 structure is composed of n-type GaAs substrate, Si3N4 antireflection film, Gax1Al1-x1As buffer layer 1, Gax2Al1-x2As buffer layer 2, Composed of p-type GaAs emitter layer and Cs / O active layer; the buffer layer is divided into Gax1Al1‑x1As buffer layer 1 and Gax2Al1‑x2As buffer layer 2, which adopt gradient doping and exponential doping respectively, and the two buffer layers are variable GaAlAs with Al composition; the photodetector has the advantages of realizing photodetection with wide band, high precision, high sensitivity and fast response.

Description

technical field [0001] The invention relates to a photodetector for wide-band detection, in particular to a photodetector structure and preparation method based on a blue-extended transmissive GaAlAs / GaAs photocathode. The invention belongs to the field of optoelectronic technology. Background technique [0002] Non-imaging photodetectors mainly work on the principle of the external photoelectric effect. The photodetector based on the photocathode uses the effect of the photocathode to emit photoelectrons into the vacuum under the action of light radiation to detect signals. Photodetectors are widely used in various fields such as national economy and military affairs. Corresponding to different wavelength bands, photodetectors have different applications. In the visible and near-infrared bands, photodetectors are mainly used in ray measurement and detection, industrial automatic control, photometric measurement, etc.; in the infrared band, their main uses are missile guid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224
CPCH01L31/0224
Inventor 陈亮苏玲爱徐珍宝何敏游魏来汪旭辉尹琳杨凯邹细勇石岩孟彦龙张淑琴金尚忠
Owner CHINA JILIANG UNIV
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