The invention discloses a broadband detecting photoelectric detector and a preparation method thereof. The photoelectric detector has a semi-cylindrical structure and mainly comprises the components of a GaAlAs / GaAs photoelectric cathode 1, an anode 2 for collecting electrons, a glass window 3, a housing 4, a package base 5, an anode 6 and pins 7,8. The GaAlAs / GaAs photoelectric cathode 1 is composed of an n-type GaAs substrate, an Si3N4 antireflection coating, a GaxlAll-x1As buffer layer 1, a Gax2All-x2As buffer layer 2, a p-type GaAs transmission layer, a Cs / O activation layer, wherein the n-type GaAs substrate, the Si3N4 antireflection coating, the GaxlAll-x1As buffer layer 1, the Gax2All-x2As buffer layer 2, the p-type GaAs transmission layer and the Cs / O activation layer are successively arranged from bottom to top. The buffer layers comprise the GaxlAll-x1As buffer layer 1 and the Gax2All-x2As buffer layer 2. A gradient doping mode and an index doping mode are utilized respectively. The two buffer layers are GaAlAs with different Al component. The broadband detecting photoelectric detector is advantageous by realizing photoelectric detection with advantages of broad band, high precision, high sensitivity and high response speed.