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Broadband detecting photoelectric detector

A photodetector and broadband technology, applied in the field of optoelectronics, can solve the problem of no photodetector, etc., and achieve the effects of improving interface characteristics, ensuring sensitivity, and reducing dislocations

Active Publication Date: 2016-04-20
CHINA JILIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no one photodetector suitable for detection in all wavelength bands

Method used

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Embodiment Construction

[0019] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0020] figure 1 It is a schematic diagram of the overall structure of the present invention, including a GaAlAs / GaAs photocathode 1, an anode 2 for collecting electrons, a glass window 3, a casing 4, a packaging base 5, an electrode 6 and pins 7, 8. There is an opening at the top of the casing 4, and the package base 5 and the casing 4 are packaged and evacuated to form a sealed cavity. The structure of the GaAlAs / GaAs photocathode 1 and the anode 2 for collecting electrons adopts a semi-cylindrical cathode type, and the electron collecting Above the anode 2 is a transparent SiO 2 A glass window 3 made of glass, the glass window 3 is sealed with the casing 4 at the opening of the casing 4, the electrode 6 is connected to the anode 2 for collecting electrons, and the pins 7 and 8 are connected to the GaAlAs / GaAs photocathode 1. The e...

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Abstract

The invention discloses a broadband detecting photoelectric detector and a preparation method thereof. The photoelectric detector has a semi-cylindrical structure and mainly comprises the components of a GaAlAs / GaAs photoelectric cathode 1, an anode 2 for collecting electrons, a glass window 3, a housing 4, a package base 5, an anode 6 and pins 7,8. The GaAlAs / GaAs photoelectric cathode 1 is composed of an n-type GaAs substrate, an Si3N4 antireflection coating, a GaxlAll-x1As buffer layer 1, a Gax2All-x2As buffer layer 2, a p-type GaAs transmission layer, a Cs / O activation layer, wherein the n-type GaAs substrate, the Si3N4 antireflection coating, the GaxlAll-x1As buffer layer 1, the Gax2All-x2As buffer layer 2, the p-type GaAs transmission layer and the Cs / O activation layer are successively arranged from bottom to top. The buffer layers comprise the GaxlAll-x1As buffer layer 1 and the Gax2All-x2As buffer layer 2. A gradient doping mode and an index doping mode are utilized respectively. The two buffer layers are GaAlAs with different Al component. The broadband detecting photoelectric detector is advantageous by realizing photoelectric detection with advantages of broad band, high precision, high sensitivity and high response speed.

Description

technical field [0001] The invention relates to a photodetector for wide-band detection, in particular to a photodetector structure and preparation method based on a blue-extended transmissive GaAlAs / GaAs photocathode. The invention belongs to the field of optoelectronic technology. Background technique [0002] Non-imaging photodetectors mainly work on the principle of the external photoelectric effect. The photodetector based on the photocathode uses the effect of the photocathode to emit photoelectrons into the vacuum under the action of light radiation to detect signals. Photodetectors are widely used in various fields such as national economy and military affairs. Corresponding to different wavelength bands, photodetectors have different applications. In the visible and near-infrared bands, photodetectors are mainly used in ray measurement and detection, industrial automatic control, photometric measurement, etc.; in the infrared band, their main uses are missile guid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224
CPCH01L31/0224
Inventor 陈亮苏玲爱徐珍宝何敏游魏来汪旭辉尹琳杨凯邹细勇石岩孟彦龙张淑琴金尚忠
Owner CHINA JILIANG UNIV
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