PIN photoelectric diode, X-ray detection picture element and device and detection method of X-ray detection device
A photodiode and X-ray technology, which can be used in measuring devices, X/γ/cosmic radiation measurement, photovoltaic power generation, etc., and can solve problems such as PIN photodiode defect dark current
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[0034] The specific implementations of the PIN photodiode, X-ray detection pixel, device and detection method provided by the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0035] An embodiment of the present invention provides a PIN photodiode, such as figure 1 As shown, it may include: intrinsic layer I, first doped layer 01 and second doped layer 02; also includes: third doped layer 03; intrinsic layer I is located in first doped layer 01 and second doped layer Between the impurity layers 02 , the third doped layer 03 is located on the second doped layer 02 .
[0036] The above-mentioned PIN photodiode provided by the embodiment of the present invention can prevent the second doped layer from being periodically damaged by covering the second doped layer with a third doped layer, thereby preventing the surface of the second doped layer from The occurrence of defects can improve the defect dark current ...
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