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PIN photoelectric diode, X-ray detection picture element and device and detection method of X-ray detection device

A photodiode and X-ray technology, which can be used in measuring devices, X/γ/cosmic radiation measurement, photovoltaic power generation, etc., and can solve problems such as PIN photodiode defect dark current

Active Publication Date: 2016-07-27
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide a PIN photodiode, an X-ray detection pixel, a device and a detection method thereof, which are used to improve the problem of dark current defects on the surface of the PIN photodiode, improve the image quality of the X-ray detector, and reduce X-ray detection. radiation dose

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  • PIN photoelectric diode, X-ray detection picture element and device and detection method of X-ray detection device

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Embodiment Construction

[0034] The specific implementations of the PIN photodiode, X-ray detection pixel, device and detection method provided by the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0035] An embodiment of the present invention provides a PIN photodiode, such as figure 1 As shown, it may include: intrinsic layer I, first doped layer 01 and second doped layer 02; also includes: third doped layer 03; intrinsic layer I is located in first doped layer 01 and second doped layer Between the impurity layers 02 , the third doped layer 03 is located on the second doped layer 02 .

[0036] The above-mentioned PIN photodiode provided by the embodiment of the present invention can prevent the second doped layer from being periodically damaged by covering the second doped layer with a third doped layer, thereby preventing the surface of the second doped layer from The occurrence of defects can improve the defect dark current ...

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Abstract

The invention discloses a PIN photoelectric diode, an X-ray detection picture element and device and a detection method of the X-ray detection device. The PIN photoelectric diode comprises an intrinsic layer, a first doped layer, a second doped layer and a third doped layer, wherein the intrinsic layer is located between the first doped layer and the second doped layer; and the third doped layer is located on the second doped layer. According to the PIN photoelectric diode disclosed by the embodiment of the invention, the second doped layer can be prevented from being periodically damaged by covering the second doped layer by the third doped layer, so that defects are prevented from appearing on the surface of the second doped layer; improvement of a defect dark current caused by the surface defects on the surfaces of the doped layers of the PIN photoelectric diode is facilitated; meanwhile, the PIN photoelectric diode is applied to an X-ray detector; and the picture quality can be improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a PIN photodiode, an X-ray detection pixel, a device and a detection method thereof. Background technique [0002] At present, X-ray detectors are widely used in the medical imaging industry and are the eyes of physicians. X-ray detectors are divided into direct type and indirect type. Among them, the direct type requires a higher dose of X-rays to image, which will cause incidental damage to the human body; compared with the direct type, the indirect type uses PIN photodiodes, so The required X-ray dose is relatively small. Indirect X-ray detectors have gradually become the mainstream of the market. [0003] However, since the periodicity of the N+ doped layer of the PIN photodiode is destroyed, its surface has defects, which leads to the existence of defect dark current, which will cause noise and affect image quality. In addition, the X-ray detector includes two switch tra...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/115G01T1/24
CPCG01T1/24H01L31/03529H01L31/115G01T1/247H01L31/105Y02E10/548H01L31/075
Inventor 何小祥祁小敬
Owner BOE TECH GRP CO LTD
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