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pin photodiode, x-ray detection pixel, device and detection method thereof

A photodiode and X-ray technology, applied in measuring devices, X/γ/cosmic radiation measurement, photovoltaic power generation, etc., can solve problems such as dark current of PIN photodiode defects

Active Publication Date: 2017-08-11
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Embodiments of the present invention provide a PIN photodiode, an X-ray detection pixel, a device and a detection method thereof, which are used to improve the problem of dark current defects on the surface of the PIN photodiode, improve the image quality of the X-ray detector, and reduce X-ray detection. radiation dose

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Embodiment Construction

[0034] The specific implementations of the PIN photodiode, X-ray detection pixel, device and detection method provided by the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0035] An embodiment of the present invention provides a PIN photodiode, such as figure 1 As shown, it may include: intrinsic layer I, first doped layer 01 and second doped layer 02; also includes: third doped layer 03; intrinsic layer I is located in first doped layer 01 and second doped layer Between the impurity layers 02 , the third doped layer 03 is located on the second doped layer 02 .

[0036] The above-mentioned PIN photodiode provided by the embodiment of the present invention can prevent the second doped layer from being periodically damaged by covering the second doped layer with a third doped layer, thereby preventing the surface of the second doped layer from The occurrence of defects can improve the defect dark current ...

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Abstract

The invention discloses a PIN photodiode, an X-ray detection pixel, a device and a detection method thereof. The PIN photodiode includes: an intrinsic layer, a first doped layer and a second doped layer; and also includes: a third doped layer The heterogeneous layer; the intrinsic layer is located between the first doped layer and the second doped layer, and the third doped layer is located on the second doped layer. Specifically, the PIN photodiode provided by the embodiment of the present invention can prevent the second doped layer from being periodically damaged by covering the second doped layer with a third doped layer, thereby preventing the second doped layer from being damaged by the second doped layer. Defects appear on the surface of the doped layer, which is beneficial to improve the defect dark current of the PIN photodiode due to the surface defects on the surface of the doped layer. At the same time, the application of the PIN photodiode to the X-ray detector can improve the image quality.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a PIN photodiode, an X-ray detection pixel, a device and a detection method thereof. Background technique [0002] At present, X-ray detectors are widely used in the medical imaging industry and are the eyes of physicians. X-ray detectors are divided into direct type and indirect type. Among them, the direct type requires a higher dose of X-rays to image, which will cause incidental damage to the human body; compared with the direct type, the indirect type uses PIN photodiodes, so The required X-ray dose is relatively small. Indirect X-ray detectors have gradually become the mainstream of the market. [0003] However, since the periodicity of the N+ doped layer of the PIN photodiode is destroyed, its surface has defects, which leads to the existence of defect dark current, which will cause noise and affect image quality. In addition, the X-ray detector includes two switch tra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/115G01T1/24
CPCG01T1/24H01L31/03529H01L31/115G01T1/247H01L31/105Y02E10/548H01L31/075
Inventor 何小祥祁小敬
Owner BOE TECH GRP CO LTD
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