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Semiconductor manufacturing method and semiconductor manufacturing device

A manufacturing method and semiconductor technology, which are applied in the field of manufacturing of semiconductor devices and manufacturing devices of semiconductor devices

Active Publication Date: 2016-10-05
株式会社PANGEA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the above method, the material of the supporting substrate is limited to a material with translucency

Method used

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  • Semiconductor manufacturing method and semiconductor manufacturing device
  • Semiconductor manufacturing method and semiconductor manufacturing device
  • Semiconductor manufacturing method and semiconductor manufacturing device

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Embodiment Construction

[0012] Hereinafter, embodiments of the present invention will be described with reference to the drawings. This embodiment does not limit the present invention.

[0013] The method of manufacturing a semiconductor device according to this embodiment includes a step of manufacturing a laminate, a step of thinning a semiconductor substrate, a step of weakening a bonding layer, and a step of separating a semiconductor substrate in this order. Hereinafter, these steps will be described together with the configuration for implementing each step.

[0014] (Manufacturing steps of laminated body)

[0015] In the method of manufacturing a semiconductor device according to this embodiment, first, a step of manufacturing a laminate is performed.

[0016] Here, a configuration example of the laminate will be described.

[0017] figure 1 It is a schematic sectional view of the laminated body 1 which can be used in the manufacturing method of the semiconductor device of this embodiment....

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PUM

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Abstract

Embodiments of the invention provide a semiconductor manufacturing method capable of increasing the degree of freedom of material selection of a supporting substrate and a semiconductor manufacturing device. For a stacked body that includes a semiconductor substrate, a supporting substrate and a joining layer, the method includes irradiating the stacked body with electromagnetic wave having energy of 0.11 to 0.14 eV from a side of the supporting substrate, and separating the semiconductor substrate from the supporting substrate, wherein the supporting substrate contains silicon, and the joining layer is disposed between the semiconductor substrate and the supporting substrate to joint the semiconductor substrate and the supporting substrate.

Description

[0001] [Related application] [0002] This application enjoys the priority of Japanese Patent Application No. 2015-53842 (filing date: March 17, 2015) as the basic application. This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to a manufacturing method of a semiconductor device and a manufacturing apparatus of the semiconductor device. Background technique [0004] In the semiconductor manufacturing process, the wafer processed in the previous step (wafer process) is thinned. Thinning is carried out in a state where the wafer is bonded (temporarily bonded) to a light-transmitting support substrate with a bonding layer. Furthermore, in order to facilitate the separation of the thinned wafer from the support substrate, a light-to-heat conversion layer decomposed by energy of visible light is provided between the wafer and the support substrate....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/263B32B43/00
CPCB32B43/006H01L21/263H01L21/304H01L2221/6834H01L21/6835H01L2221/68318H01L2221/68381H01L2221/68327
Inventor 白河达彦高桥健司高野英治志摩真也
Owner 株式会社PANGEA