Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A self-assembled monomolecular film induced growth method of dast and its derivative single crystal thin film

A technology for self-assembling single-molecule and single-crystal thin films, applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of interfering crystal growth, easy formation of twins, poor controllability of crystal thickness and orientation, etc. Overcome the poor controllability of thickness and orientation, avoid twinning, and control the effect of orientation

Inactive Publication Date: 2018-05-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to: aim at the problems existing in the prior art, provide a kind of self-assembled monomolecular film induced growth method of DAST and its derivative single crystal thin film, can effectively overcome the crystal thickness and the orientation of organic thin film single crystal growth process Problems such as poor controllability, easy formation of twins, and water vapor interfering with crystal growth can effectively control the thickness and growth direction of DAST or DAST derivative crystals to avoid the formation of twins

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A self-assembled monomolecular film induced growth method of dast and its derivative single crystal thin film
  • A self-assembled monomolecular film induced growth method of dast and its derivative single crystal thin film
  • A self-assembled monomolecular film induced growth method of dast and its derivative single crystal thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0044] Such as figure 1 As shown, the main structure of this embodiment includes a beaker 1, a glass sheet 2, a DAST methanol solution 3, and a sealed box 4 with a humidity of 4%. Two pieces of glass slides 2 are inserted into the methanol solution 3 of DAST in the manner of leaning against the mouth of the beaker 1 close to each other.

[0045] The amorphous substrate used in this example is a glass flake with a size of 2.5cm×7.5cm, and dry DAST powder is used as a raw material. The specific growth process is as follows:

[0046] (1) select dry DAST powder to be dissolved in methanol solvent, be mixed with the methanol solution of DAST that the mass fraction of DAST is 1%, standby;

[0047] (2) Clean the two glass substrates: ultrasonically in acetone, ethanol and deionized water for 15 minutes respectively, and then blow dry with high-purity nitrogen;

[0048] (3) Prepare Piranha solution: slowly add concentrated sulfuric acid to 30% H2O according to the volume ratio of 7:...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for inducing the growth of a self-assembled monomolecular film of DAST and its derivative monocrystalline film. First, self-assembled on the surface of a substrate containing -SO3-, -OH, -Cl-, -NH2, -F-F One layer of monomolecular film of one or several functional groups in ‑COOH, functionalize the substrate, and then insert the functionalized two substrates side by side into the DAST or DAST derivative solution, and slowly evaporate the solvent In this method, single crystals of DAST or DAST derivatives are grown between two substrates. The invention can effectively overcome the problems of poor controllability of crystal thickness and orientation, easy formation of twins, interference of crystal growth by water vapor and the like during the growth process of organic thin film single crystals, and can effectively control the thickness and growth direction of DAST or DAST derivative crystals, Avoid twinning.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, and relates to a method for inducing the growth of a self-assembled monomolecular film of DAST and its derivative monocrystalline film. Background technique [0002] Organic nonlinear optical materials are widely used in optical frequency conversion and optical signal processing, and have important application values ​​in lasers, communications, electronic instruments, and medical equipment. Compared with inorganic nonlinear materials, organic nonlinear optical materials usually have the advantages of larger nonlinear optical coefficient, higher damage threshold, easy processing, synthesis and modification (see J.Zyss, J.Mol.Electron. , 1985, 1, 25. Literature). [0003] Among them, the organic DAST crystal is considered to be one of the best nonlinear optical materials, with a large second-order nonlinear coefficient (for example, under the action of 1318nm wavelength laser, the d of DAS...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C07D213/38C30B7/06C30B29/54
CPCC30B7/06C30B29/54
Inventor 许向东戴泽林陈哲耕蒋亚东孙铭徽谷雨王福连宇翔李欣荣
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products